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Memory testing device and testing voltage adjusting method

A technology for testing voltage and memory, applied in static memory, instruments, etc., can solve problems such as test voltage deviation, test board difference, etc., to achieve the effect of accurate test voltage

Pending Publication Date: 2021-02-19
润昇系统测试(深圳)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the test voltage supply of the test board may vary
In addition, in actual use, the test voltage may deviate from the expected actual voltage value over time due to the decay of the internal circuit of the test board or the failure of components

Method used

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  • Memory testing device and testing voltage adjusting method
  • Memory testing device and testing voltage adjusting method
  • Memory testing device and testing voltage adjusting method

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Embodiment Construction

[0042] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference symbols are used in the drawings and descriptions to refer to the same or like parts.

[0043] Please refer to figure 1 , figure 1 It is a device schematic diagram of a memory testing device according to the first embodiment of the present invention. In this embodiment, the memory testing device 100 is used for testing the memory modules DUT_1˜DUT_n to be tested. In this embodiment, the memory modules DUT_1 to DUT_n to be tested are Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) modules respectively. Further, the memory modules DUT_1 to DUT_n to be tested are respectively packaged double data rate (Double Data Rate, DDR) dynamic random access memory modules, such as DDR4, DDR5 or higher specification dynamic random access memory module. The memory testing ...

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Abstract

The invention provides a memory testing device and a testing voltage adjusting method. The memory testing device is used for testing at least one memory module to be tested. The memory test device comprises a host, at least one test board and at least one detector. The host provides a test process; the at least one test board tests a corresponding to-be-tested memory module in the at least one to-be-tested memory module based on a test flow; each of the at least one detector receives a test voltage associated with a test flow provided by a corresponding test board in the at least one test board, and generates voltage offset information according to the offset of the test voltage; and the host adjusts the test flow according to the voltage offset information, so that the corresponding testboard adjusts the test voltage according to the adjusted test flow.

Description

technical field [0001] The invention relates to a test device and a voltage adjustment method, and in particular to a memory test device and a test voltage adjustment method for testing a memory module to be tested. Background technique [0002] Existing test devices generally provide a plurality of test voltages for the memory module to be tested, so as to test the memory module to be tested. The test voltage settings of the test boards provided by different test board suppliers may be different. Therefore, the test voltage supply of the test board may vary. In addition, in actual use, the test voltage may deviate from the expected actual voltage value as time goes by due to the decay of the internal circuit of the test board or the failure of components. Therefore, how to enable the test board to provide accurate test voltage based on the test process is one of the subjects that those skilled in the art are striving to study. Contents of the invention [0003] The inv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/02G11C29/50
CPCG11C29/028G11C29/50G11C2029/5004
Inventor 周少东陈世兴颜振亮姜文贵
Owner 润昇系统测试(深圳)有限公司
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