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Equipment including single crystal material and related method, electronic device, and electronic system

A device, single crystal technology, applied in circuits, transistors, electrical components, etc., can solve the problems of increasing complexity and cost of control insulators

Active Publication Date: 2021-02-23
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, controlling the thickness of the insulator increases the complexity and cost of fabricating conventional electronic devices containing MIS contacts

Method used

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  • Equipment including single crystal material and related method, electronic device, and electronic system
  • Equipment including single crystal material and related method, electronic device, and electronic system
  • Equipment including single crystal material and related method, electronic device, and electronic system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] Embodiment 1: An apparatus comprising: a memory array comprising word lines, bit lines, and memory cells, each memory cell coupled to an associated word line and an associated bit line, and each memory The unit comprises: an access device; a single crystal semiconductor material epitaxially grown on the access device; a metal silicide material of the single crystal semiconductor material and a part of the metal; a metal plug material, the the metal plug material over the metal silicide material; and a storage node over the metal plug material.

Embodiment 2

[0072] Embodiment 2: The apparatus of Embodiment 1, wherein the access means comprises a transistor comprising a first diffusion region and a second diffusion region, the single crystal semiconductor material epitaxially grown on the first diffusion region district.

Embodiment 3

[0073] Embodiment 3: The apparatus of Embodiment 2, wherein each of the first and second diffusion regions and the single crystal semiconductor material comprises single crystal silicon.

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Abstract

The invention relates to equipment including a single crystal material and a related method, an electronic device and an electronic system. Equipment comprising a memory array comprising wordlines, digit lines, and memory cells, with each memory cell coupled to an associated wordline and an associated digit line. Each memory cell comprises a monocrystalline silicon material adjacent to an access device, a monocrystalline metal silicide material directly contacting the monocrystalline semiconductor material, a metal material directly contacting the monocrystalline metal silicide material, and astorage device adjacent to the metal material. Electronic devices, electronic systems, and methods of forming an electronic device are also disclosed.

Description

[0001] priority claim [0002] 本申请要求2019年8月13日申请的题为“包括单晶半导体材料和单晶金属硅化物材料的设备以及相关方法、电子装置和电子系统(Apparatus ComprisingMonocrystalline Semiconductor Materials and Monocrystalline Metal SilicideMaterials,and Related Methods , Electronic Devices, and Electronic Systems)" U.S. Patent Application Serial No. 16 / 539,520." technical field [0003] Embodiments disclosed herein relate to an apparatus (eg, an electronic device) and apparatus manufacture. More specifically, this public embodiment involves equipment containing single crystal metal silicone materials and single -crystal semiconductor materials, as well as related methods, electronic devices and electronic systems. Background technique [0004] The designer of the electronic device hopes to increase the size or density of the characteristics in the electronic device by reducing the size of the individual characteristics and reducing the distance between the adjacent features. Additionally, electronic device designers often des...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/02H10B12/30H10B12/485H01L21/76897H01L21/28525H01L21/28518H10B12/315H10B12/0335H01L23/528H01L29/456H01L29/0847H01L21/32135H01L21/02598H01L21/02595H01L21/32053H01L21/02576H01L21/02532H10B12/50
Inventor 井脇孝之
Owner MICRON TECH INC