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A kind of preparation method of silicon nanosheet array

A technology of silicon nanosheets and arrays, which is applied in the field of preparation of silicon nanosheet arrays, can solve problems such as low density and uncontrollable shape, and achieve the effects of uniform size, simple preparation method, and low density

Active Publication Date: 2022-02-11
CHONGQING UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is simple and efficient to prepare high-density and controllable nanosheet arrays, which solves the problems of low density and uncontrollable morphology in the current preparation of silicon nanosheet arrays.

Method used

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  • A kind of preparation method of silicon nanosheet array
  • A kind of preparation method of silicon nanosheet array
  • A kind of preparation method of silicon nanosheet array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A method for preparing a silicon nanosheet array, carried out as follows:

[0034] (1) Silicon substrate pretreatment

[0035] Set the size to 8*8mm 2 , a thickness of about 1 mm, and a single crystal silicon substrate with a crystal plane of (111) was soaked in 50 mL of acetone solution for ultrasonication, and then evaporated to the remaining 15 mL of acetone solution. : Soak in the mixed solution formed by the volume ratio of 1:2 for 10 seconds, rinse with pure water, and finally dip it in an aqueous solution of hydrofluoric acid with a volume fraction of 8% for cleaning, and dry it in the air after washing;

[0036] (2) Preparation of silicide precursor

[0037] Place the pretreated silicon substrate and 0.025g of calcium metal particles in an adaptation container, the calcium metal particles are at the bottom of the quartz container, the silicon substrate is at the upper end of the calcium metal particles, and keep a certain distance, face down, and use the quart...

Embodiment 2

[0044] A method for preparing a silicon nanosheet array, carried out as follows:

[0045] (1) Silicon substrate pretreatment

[0046] Set the size to 8*8mm 2 , a thickness of about 1 mm, and a single crystal silicon substrate with a crystal plane of (111) was soaked in 50 mL of acetone solution for ultrasonication, and then evaporated to the remaining 15 mL of acetone solution. : Soak in the mixed solution formed by the volume ratio of 1:2 for 10 seconds, rinse with pure water, and finally dip it in a hydrofluoric acid aqueous solution with a volume fraction of 10%, and dry it in the air after washing;

[0047] (2) Preparation of silicide precursor

[0048] Place the silicon substrate and 0.03g of calcium metal particles in an adaptation container, the calcium metal particles are at the bottom of the quartz container, the silicon substrate is at the upper end of the calcium metal particles, and keep a certain distance, face down, and the quartz container mouth is sealed with...

Embodiment 3

[0055] A method for preparing a silicon nanosheet array, carried out as follows:

[0056] (1) Silicon substrate pretreatment

[0057] Set the size to 8*8mm 2 , a thickness of about 1 mm, and a single crystal silicon substrate with a crystal plane of (111) was soaked in 50 mL of acetone solution for ultrasonication, and then evaporated to the remaining 15 mL of acetone solution. : Soak in the mixed solution formed by the volume ratio of 1:2 for 10 seconds, rinse with pure water, and finally dip it with a hydrofluoric acid aqueous solution with a volume fraction of 5% for cleaning, and dry it in the air after washing;

[0058] (2) Preparation of silicide precursor

[0059] Place the silicon substrate and 0.02g of calcium metal particles in an adaptation container, the calcium metal particles are at the bottom of the quartz container, the silicon substrate is at the upper end of the calcium metal particles, and keep a certain distance, face down, and the quartz container mouth ...

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Abstract

A method for preparing a silicon nanosheet array, which is to pretreat a silicon substrate with a crystal plane of (111), place it in a vacuum with calcium, and conduct a segmented heating reaction at 630-640°C and 700-720°C in sequence, and the reaction After completion, lower it to room temperature, soak the reacted silicon substrate in an ethanol solution of manganese chloride for 2 hours, and then place the manganese chloride particles at both ends of the sectional heating furnace respectively, and feed nitrogen throughout the process, and put the manganese chloride particles One end is heated to 700~830°C, one end of the substrate is heated to 500~600°C for heat preservation reaction, and cooled to room temperature after the reaction. The silicon nanosheets prepared by the present invention are perpendicular to the silicon substrate and form an array, the distance between the nanosheets reaches 10-100nm, the nanosheets do not agglomerate or collapse, the thickness of the nanosheets can be effectively adjusted between 5-150nm, and the height reaches 2μm Around, the yield is high, and the yield can reach 55.7~63.9% of the raw material, forming a high-density silicon nanosheet array with a purity of up to 96.4%.

Description

technical field [0001] The invention relates to the technical field of silicon nanometer materials, in particular to a method for preparing a silicon nanosheet array. Background technique [0002] Silicon is an abundant and environment-friendly element, and it is also the basic material of modern electronics industry and photovoltaic industry. At the same time, silicon is also used in new industries such as degradable electronic sensors, drug delivery devices, and lithium battery anode materials. Recently, the preparation methods of low-dimensional silicon nanomaterials have been greatly developed, such as chemical vapor deposition and chemical etching. At present, there are relatively few studies on two-dimensional silicon nanosheets, mainly due to the cubic structure of sp3 hybridization of silicon, which makes it difficult to self-assemble into two-dimensional nanostructure materials with atomic thickness, but silicon nanosheets show excellent electrical properties. , O...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/021B82Y40/00H01M10/052H01M4/38
CPCC01B33/021B82Y40/00H01M4/386H01M10/052Y02E60/10
Inventor 孟祥程江唐华李璐立冈浩一
Owner CHONGQING UNIV OF ARTS & SCI