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On-chip waveguide loss measuring method and measuring device and manufacturing method thereof

A technology of measurement device and manufacturing method, which is applied in the direction of testing optical performance, etc., can solve the problems that it is difficult to effectively reduce the cost of silicon optical module packaging and measurement, and the cost advantage of silicon optical chips cannot be fully displayed, so as to achieve efficient and fast waveguide loss measurement, reduce the Accurate precision requirements, the effect of reducing the structure area

Pending Publication Date: 2021-03-05
SHANGHAI IND U TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although the silicon photonics chip manufacturing process is compatible with the CMOS process, it is difficult to effectively reduce the packaging and measurement cost of the silicon photonics module, which also prevents the cost advantage of the silicon photonics chip from being fully displayed

Method used

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  • On-chip waveguide loss measuring method and measuring device and manufacturing method thereof
  • On-chip waveguide loss measuring method and measuring device and manufacturing method thereof
  • On-chip waveguide loss measuring method and measuring device and manufacturing method thereof

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Embodiment 1

[0046] An embodiment of the present application provides an on-chip waveguide loss measurement device.

[0047] figure 1 is a schematic diagram of the on-chip waveguide loss measurement device in the first embodiment of the present application in the lateral direction, figure 2 It is a schematic diagram of the cross-section of the on-chip waveguide loss measuring device according to Embodiment 1 of the present application in the longitudinal direction.

[0048] Such as figure 1 and figure 2 As shown, the on-chip waveguide loss measurement device 1 includes: an optical coupler 102 , a linear waveguide 103 , a ring resonant cavity 104 , a polarization adjustment element 105 , a photodetector 106 and a heater 107 .

[0049] Such as figure 2 As shown, the optical coupler 102 is formed in the top silicon 101 of the silicon-on-insulator (SOI) substrate 100; the linear waveguide 103 and the ring resonant cavity 104 are formed in the top silicon 101, and the light incident end ...

Embodiment 2

[0081] Embodiment 2 provides a method for manufacturing an on-chip waveguide loss measuring device, which is used to manufacture the on-chip waveguide loss measuring device described in Embodiment 1.

[0082] Figure 5 is a schematic diagram of the manufacturing method of the on-chip waveguide loss measuring device of this embodiment. Such as Figure 5 As shown, in this embodiment, the manufacturing method may include:

[0083] Step 501, forming an optical coupler 102 in the top layer silicon 101 of a silicon-on-insulator (SOI) substrate 100;

[0084] Step 502, forming a linear waveguide cavity 103 and a ring resonant cavity 104 in the top-layer silicon 101, wherein the light incident end of the linear waveguide 103 is opposite to the light output end of the optical coupler in the lateral direction, and the The minimum distance between the ring resonant cavity 104 and the linear waveguide is the first distance;

[0085] Step 503, forming a polarization adjustment element 1...

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Abstract

The invention provides an on-chip waveguide loss measuring method and measuring device and a manufacturing method thereof. The on-chip waveguide loss measuring device includes: an optical coupler formed in top silicon of a silicon-on-insulator (SOI) substrate; a linear waveguide which is formed in the top silicon and extends along the linear direction, wherein the light incident end of the linearwaveguide is opposite to the light emergent end of the optical coupler in the transverse direction; an annular resonant cavity which is formed in the top silicon, wherein the minimum distance betweenthe annular resonant cavity and the linear waveguide is a first distance; a polarization adjusting element which is positioned on one side, close to the optical coupler, of the linear waveguide, and is used for adjusting the polarization state of light in the linear waveguide; a photoelectric detector which is formed on the top silicon and used for detecting light outputted by the light output endof the linear waveguide and generating current; and a heater which formed at a predetermined distance from the annular resonant cavity.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for measuring waveguide loss on a silicon substrate, a measuring device and a manufacturing method thereof. Background technique [0002] Silicon photonics is a new generation of technology based on silicon and silicon-based substrate materials (such as SiGe / Si, SOI, etc.), using existing CMOS technology for optical device development and integration, which combines the ultra-large-scale, ultra- The characteristics of high-precision manufacturing and the advantages of ultra-high speed and ultra-low power consumption of photonic technology. Silicon photonics not only has urgent application requirements in the field of optical communication and optical interconnection at this stage, but also a potential technology for realizing intra-chip optical interconnection and optical computer in the future. [0003] Although the silicon photonics chip manufacturing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01M11/02
CPCG01M11/02
Inventor 汪巍方青涂芝娟曾友宏蔡艳余明斌
Owner SHANGHAI IND U TECH RES INST
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