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Method and device for improving reliability of system DRAM and storage medium

A reliability and voltage technology, applied in the field of improving the reliability of system DRAM and computer-readable storage media, can solve the problems of unstable DRAM reliability and limited improvement.

Pending Publication Date: 2021-03-05
ZTE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the degree of improvement of this control method is limited, so that the reliability of DRAM is still unstable.

Method used

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  • Method and device for improving reliability of system DRAM and storage medium
  • Method and device for improving reliability of system DRAM and storage medium
  • Method and device for improving reliability of system DRAM and storage medium

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Embodiment Construction

[0040] It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0041] Such as figure 1 as shown, figure 1 It is a schematic diagram of the device structure of the hardware operating environment involved in the solution of the embodiment of the present invention.

[0042] The terminal in this embodiment of the present invention may be a PC, or a terminal device with a data processing function such as a smart phone, a tablet computer, or a portable computer.

[0043] Such as figure 1 As shown, the terminal may include: a processor 1001 , such as a CPU, a network interface 1004 , a user interface 1003 , a memory 1005 , and a communication bus 1002 . Wherein, the communication bus 1002 is used to realize connection and communication between these components. The user interface 1003 may include a display screen (Display), an input unit such as a keyboard (Keyboard), and the option...

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Abstract

The invention discloses a method for improving the reliability of a system DRAM. The method comprises the following steps: obtaining a representation voltage of a DRAM, and carrying out reliability verification on a voltage value of the representation voltage; calculating a voltage deviation value of the power supply voltage under the DRAM ideal model according to a verification result of reliability verification; and adjusting the power supply voltage of the DRAM according to the voltage deviation value. The invention further discloses a device for improving the reliability of the system DRAMand a computer readable storage medium. According to the invention, the system DRAM has higher reliability.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to a method, device and computer-readable storage medium for improving the reliability of a system DRAM. Background technique [0002] DRAM (Dynamic Random Access Memory), that is, dynamic random access memory, is a common system memory. The main working principle of Dynamic Random Access Memory (DRAM) is to use the amount of internal storage to represent whether a (bit) is 1 or 0. At this stage, with the popularity of the Internet and smart devices, users have put forward higher requirements for the speed, power consumption and reliability of DRAM. [0003] However, at the current stage, the DRAM mainly achieves the purpose of ensuring the reliability of the DRAM by arranging a voltage coupling / decoupling device in the DRAM device to improve the bias sensing of the sense amplifier. However, the degree of improvement of this control method is limited, so that the reliability of D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/4074G11C29/50
CPCG11C11/4074G11C29/50G11C2029/5004G11C29/021G11C29/028G11C29/50004
Inventor 刘凤鹏刘冬梅
Owner ZTE CORP