Check patentability & draft patents in minutes with Patsnap Eureka AI!

Memory device

A memory and device technology, applied in the field of non-volatile memory devices, can solve problems such as poor durability of FTJ

Inactive Publication Date: 2021-03-05
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many challenges in forming FTJs suitable for memory devices
For example, due to the breakdown of certain dielectric layers in the FTJ, the durability of the FTJ may be poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device
  • Memory device
  • Memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these components and arrangements are examples only and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include that additional features may be formed on the first feature and the second feature. An embodiment is formed between the second features such that the first and second features may not be in direct contact. Throughout the description herein, unless otherwise specified, the same reference numerals in different drawings refer to the same or similar components formed by the same or similar methods using the same or simil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A device includes a bottom electrode that includes a first electrically conducive material; a dielectric layer over the bottom electrode; an internal metal layer over the dielectric layer; a ferroelectric layer over the internal metal layer; and a top electrode over the ferroelectric layer, the top electrode including a second electrically conductive material, an area of the top electrode being smaller than an area of the internal metal layer.

Description

technical field [0001] Embodiments of the present invention generally relate to ferroelectric tunnel junctions (FTJs), and in particular embodiments, to ferroelectric tunnel junctions with internal metal gates and nonvolatile devices formed from such ferroelectric tunnel junctions. Sexual memory devices. Background technique [0002] A conventional ferroelectric tunnel junction (FTJ) is a tunnel junction comprising two metal electrodes separated by a thin ferroelectric layer. The direction of electrical polarization (also called orientation) of the ferroelectric layer can be switched by an applied electric field. The resistance of the FTJ (also referred to as the tunneling electrode resistance (TER) of the FTJ) is determined by the orientation of the electric polarization of the ferroelectric layer. For example, an FTJ can be changed from a high-resistance state (HRS) to a low-resistance state (LRS) by changing the electrostatic potential (e.g., voltage) distribution acros...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08G11C11/22H10N50/80H10N97/00H10N50/10
CPCG11C11/22G11C11/221H10N50/80H10N50/10H01L28/60H10B53/30
Inventor 张智胜
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com