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Gate driving device based on single-output channel drive IC

A grid-driven, single-output technology, applied to static indicators, instruments, etc., can solve the problems of grid intolerant to negative voltage impact, poor reliability, and low threshold voltage

Active Publication Date: 2021-03-09
SHENZHEN XINER SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a gate drive device based on a single output channel drive IC, the purpose of which is to solve the problems of low threshold voltage of the enhanced P-GaN power switching device, poor reliability of the grid due to negative voltage impact

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  • Gate driving device based on single-output channel drive IC
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  • Gate driving device based on single-output channel drive IC

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0029] It should be noted that the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explici...

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Abstract

The invention provides a gate driving device based on a single-output channel drive IC. The gate drive device comprises the single-output channel drive IC, a voltage stabilizing circuit, a stabilizingcircuit and a drive circuit. An output port of the single-output channel driving IC is connected with a first port of the voltage stabilizing circuit, and a second port of the voltage stabilizing circuit is respectively connected with a first port of the stabilizing circuit and a first port of the driving circuit; a second port of the stabilizing circuit and a second port of the driving circuit are both connected with a grid electrode of a P-type gallium nitride device; and a grounding port of the single output channel driving IC and a source electrode of the P-type gallium nitride device areboth grounded. According to the invention, the reliability of the PGaN gate can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a gate drive device based on a single output channel drive IC. Background technique [0002] GaN wide-bandgap semiconductor material, compared with Si material, has superior properties such as high breakdown electric field (up to 3MV / cm), high saturation electron drift velocity and good thermal conductivity, and is suitable for manufacturing applications in high frequency and High power power devices. [0003] The GaN material has a strong polarization effect. The interface of the AlGaN / GaN heterojunction grown in the polarization direction forms a two-dimensional electron gas (2DEG) with a high concentration of about 1013 cm-2 and a high electron mobility due to the polarization effect, making AlGaN / GaN Heterojunction Field Effect Transistors (HFETs) have extremely low on-resistance and are very suitable for making power switching devices. Therefore, it is an imp...

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Application Information

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IPC IPC(8): G09G3/20
CPCG09G3/20G09G2310/0267
Inventor 张益鸣刘杰
Owner SHENZHEN XINER SEMICON TECH CO LTD