Chemical mechanical planarization tool

Abstract

A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from theplaten, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

Description

technical field [0001] Some embodiments of the present disclosure relate to chemical mechanical polishing / chemical mechanical planarization. Background technique [0002] Semiconductor devices generally include active components, such as transistors, formed on a substrate. Any number of interconnection layers may be formed above the substrate to connect active components to each other or to external devices. The interconnect layers are typically made of low-k dielectric materials including metal trenches / vias. [0003] After the layers of the device are formed, a planarization process may be performed to planarize the layers to facilitate the formation of subsequent layers. For example, forming metal features in a substrate or in a metal layer can result in an uneven topography. Such uneven topography may cause difficulties in forming subsequent layers. For example, uneven topography can interfere with photolithography processes, which are commonly used to form various f...

AI Technical Summary

Problems solved by technology

For example, forming metal features in a substrate or in a metal layer can lead to uneven topography

Such uneven topography may cause difficulties in forming subsequent layers

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