Semiconductor device

Abstract

A semiconductor device according to the present disclosure includes a first gate-all-around (GAA) transistor that includes a plurality of first channel members and a first gate dielectric layer over the plurality of first channel members, and a second GAA transistor that includes a plurality of second channel members, and a second gate dielectric layer over the plurality of second channel members.A first width of each of the plurality of first channel members is greater than a second width of each of the plurality of second channel members. A first thickness of the first gate dielectric layeris smaller than a second thickness of the second gate dielectric layer.

Description

technical field [0001] The present disclosure relates to a semiconductor device, and more particularly, to a semiconductor device for high-speed and low-leakage applications. Background technique [0002] The semiconductor integrated circuit (integrated circuit; IC) industry is growing exponentially. Technological advances in IC materials and IC design have produced multiple IC generations, each IC generation having smaller and more complex circuits than the previous IC generation. During IC development, functional density (ie, the number of connected components per chip area) typically increases, while geometry size (ie, the smallest component or circuit a process can make) decreases. This miniaturization process generally provides advantages by increasing production efficiency and reducing associated costs. This scaling also increases the complexity of handling and manufacturing the IC. [0003] For example, as integrated circuit (IC) technology has evolved toward small...

AI Technical Summary

Problems solved by technology

Although existing GAA transistors and processes are often sufficient to make transistors with different threshold voltages, they are not completely satisfactory in every respect

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