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Light emitting diode epitaxial wafer and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as effective carrier recombination, low internal quantum luminescence efficiency of light-emitting diodes, and poor carrier confinement capabilities

Active Publication Date: 2021-03-16
HC SEMITEK SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the single-layer AlGaN quantum barrier layer has poor carrier confinement capabilities, which will cause carriers to fail to recombine effectively in the quantum well layer, which in turn will lead to low internal quantum luminescence efficiency of light-emitting diodes.

Method used

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  • Light emitting diode epitaxial wafer and manufacturing method thereof
  • Light emitting diode epitaxial wafer and manufacturing method thereof
  • Light emitting diode epitaxial wafer and manufacturing method thereof

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Embodiment Construction

[0028] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0029] figure 1 is a schematic structural view of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the LED epitaxial wafer includes a substrate 1 , and a buffer layer 2 , an undoped AlGaN layer 3 , an N-type layer 4 , an active layer 5 and a P-type layer 6 stacked on the substrate 1 in sequence.

[0030] The active layer 5 includes a plurality of quantum well layers 51 and quantum barrier layers 52 alternately grown periodically, and each quantum well layer 51 is A z Ga 1-z N layers. The multiple quantum barrier layers 52 include multiple first-type quantum barrier layers 521 close to the N-type layer 4 and multiple second-type quantum barrier layers 522 c...

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Abstract

The invention provides a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. An active layer of the light emitting diode epitaxial wafer comprises a plurality of quantum well layers and quantum barrier layers which are periodically and alternately grown, each quantum well layer is an AzGa1-zN layer, the plurality of quantumbarrier layers comprise a plurality of first-class quantum barrier layers close to an N-type layer and a plurality of second-class quantum barrier layers close to a P-type layer, the first-class quantum barrier layers are AlmGa1-mN layers, and z is less than m. The second-class quantum barrier layers comprises a first sub-layer, a second sub-layer and a third sub-layer which are stacked in sequence, the first sub-layer is an AlxGa1-xN layer, the second sub-layer is an AlyGa1-yN layer, z<x< y, and the third sub-layer is an AlN layer. By adopting the light emitting diode epitaxial wafer, the limiting capability of the quantum barrier layer on carriers can be improved, more carriers are compounded in the quantum well layer, and the internal quantum light-emitting efficiency of the light-emitting diode can be further improved.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Short-wavelength light-emitting diodes based on AlGaN materials have a wide range of applications and are an important research content in the field of nitride semiconductor research. [0003] Epitaxial wafers are an important component in the manufacture of light-emitting diodes. The existing light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer stacked on the substrate in sequence. The active layer includes a plurality of alternately grown quantum well layers and quantum barrier layers, wherein the quantum barrier layer is usually an AlGaN layer with a single-layer structure. [0004] However, the single-layer AlGaN quantum barrier layer has a poor confinement ability t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/32H01L33/325H01L33/007
Inventor 乔楠李昱桦刘源
Owner HC SEMITEK SUZHOU
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