Double-sided cooling structure for power semiconductor module

A power semiconductor, double-sided cooling technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems such as the inability to achieve heat dissipation and cooling of the controller box, the complex structure of the cooler, and improve the cooling effect. effect, close contact, effect of increasing heat capacity

Pending Publication Date: 2021-03-19
ZHENGHAI GRP CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Chinese patent documents CN107408554A and CN102664177A respectively disclose a power semiconductor assembly, a power conversion device, and a double-sided cooling power semiconductor module, which use a cooling structure with a pressing function to eliminate and reduce the gap between the power module and the cooler , but this structure makes the structure of the cooler complicated, and at the same time, it cannot realize the function of relying on the controller box for heat dissipation and cooling, and cooling the controller box

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-sided cooling structure for power semiconductor module
  • Double-sided cooling structure for power semiconductor module
  • Double-sided cooling structure for power semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Example figure 1 As shown, the double-sided cooling structure for the power semiconductor module of the present invention includes a controller box 1, a power semiconductor module 2, a first radiator 3 and a second radiator 4, and the heat dissipation bottom plate 31 of the first radiator 3 Arranged in parallel with the heat dissipation bottom plate 41 of the second radiator 4, the power semiconductor module 2 is arranged between the heat dissipation bottom plate 31 of the first heat sink 3 and the heat dissipation bottom plate 41 of the second heat sink 4, the first The heat dissipation bottom plate 31 of the radiator 3 is arranged close to the wall of the controller box 1, and the periphery of the heat dissipation bottom plate 31 of the first radiator 3 is connected to the controller box 1, and the heat dissipation bottom plate 31 of the first radiator 3 A first cooling water channel 32 is formed between the wall of the controller box 1, and the input port 33 and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a double-sided cooling structure for a power semiconductor module. A heat dissipation bottom plate of a first radiator and a heat dissipation bottom plate of a second radiatorare arranged in parallel at an interval, and the power semiconductor module is arranged between the heat dissipation bottom plate of the first radiator and the heat dissipation bottom plate of the second radiator; a heat dissipation bottom plate of the first radiator abuts against the wall of the controller box body, the periphery of the heat dissipation bottom plate of the first radiator is connected with the controller box body, and a first cooling water channel is formed between the heat dissipation bottom plate of the first radiator and the wall of the controller box body; and an input port and an output port of the first cooling water channel are respectively connected with a cooling liquid output end and a cooling liquid input end in the controller box body. Through large-area contact with the controller box body, the heat capacity of the radiator is increased, temperature fluctuation of the power semiconductor chip is avoided while the controller box body is fully cooled, closecontact between the power module and the cooler is achieved, the contact gap is reduced, and the cooling effect is improved.

Description

technical field [0001] The invention relates to the technical field of power device cooling, in particular to a double-sided cooling structure for power semiconductor modules. Background technique [0002] The power semiconductor module is a whole that combines and packages power electronic components according to certain functions. It has the advantages of small size and high power density, so it has a wide range of applications in the field of new energy vehicles. With the development of new energy vehicles in terms of high power and long battery life, the application environment of power semiconductor modules is becoming increasingly harsh, and the reliability of power semiconductor modules has received widespread attention. [0003] Thermal reliability is an important part of the reliability of power semiconductor modules, and thermal reliability requires that power semiconductor modules have good heat dissipation performance. Generally, the heat transfer Q of the radia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/473H01L25/07
CPCH01L23/3672H01L23/473H01L25/072H01L2224/33181H01L2224/32225
Inventor 唐玉生毛先叶郭建文
Owner ZHENGHAI GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products