Modeling method for coaxial silicon through hole filled with a single-walled carbon nanotube

Abstract

The invention relates to a modeling method for a coaxial silicon through hole filled with a single-walled carbon nanotube. The modeling method comprises the following steps: calculating the outer diameter of a depletion layer and the outer diameter of a silicon medium in the coaxial silicon through hole filled with the single-walled carbon nanotube; calculating resistance, capacitance and inductance parameters of the carbon nanotubes according to the physical properties of the carbon nanotubes; calculating capacitance, conductivity and inductance parameters of the coaxial through silicon via equivalent circuit; and establishing an equivalent circuit model of the coaxial silicon through hole filled with the single-walled carbon nanotube. According to the coaxial silicon through hole filledwith the single-walled carbon nanotubes, loss is smaller under the condition of high-frequency signals, an established equivalent circuit model is more accurate, and meanwhile calculation is simple.

Description

technical field [0001] The invention belongs to the technical field of electronics, and further relates to a modeling method for filling coaxial through-silicon holes of single-walled carbon nanotubes in the technical field of electronic devices. The present invention can establish the equivalent circuit model of the through-silicon hole by extracting the resistance, inductance, capacitance and conductance parameters of the coaxial through-silicon hole filled with single-walled carbon nanotubes. Background technique [0002] Coaxial TSVs filled with single-walled carbon nanotubes are usually used for vertical interconnection between different layers of integrated circuits. Current passing through coaxial TSVs will generate resistance, inductance, and capacitance parasitic on the coaxial TSVs. As well as the conductance parameter, an equivalent circuit model is established through the resistance, inductance, capacitance and conductance parameters parasitic on the coaxial TSV ...

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Problems solved by technology

[0005] The purpose of the present invention is to address the shortcomings of the above-mentioned prior art, and propose a modeling method for filling single-walled carbon nanotube coaxial through-silicon vias, which is used to solve complex calculations, insufficient accuracy of circuit models, and sharp electrical transmission performance at high frequencies. falling problem

[0006] The idea of ​​realizing the object of the present invention is that in order to solve the problem of sharp decline in electrical transmission performance under high frequency conditions, a coaxial through-silicon via filled with single-walled carbon nanotubes is proposed, compared with the traditional coaxial via using copper as the transmission conductor Through-silicon vias, the present invention uses single-walled carbon nanotubes as transmission conductors, and at the same time, in order to improve the accuracy of the equivalent circuit model of coaxial silicon-through-holes filled with single-walled carbon nanotubes in integrated circuits, the present invention calculates according to the physical properties of carbon nanotubes The resistance parameters of carbon nanotubes, by extracting the resistance, inductance, capacitance and conductance parameters of the coaxial silicon vias filled with single-walled carbon nanotubes, the equivalent circuit model of the coaxial silicon vias is established

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