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Aging method of IGBT switch of buck converter circuit under power frequency

A step-down converter and switch technology, which is applied in the direction of instruments, measuring electricity, electromagnetic field characteristics, etc., can solve the problems of aging EMI test, aggravating device aging, shortening life, etc., to achieve convenient and fast discussion and tracking, and simple circuit , the effect of improving efficiency

Inactive Publication Date: 2021-03-26
GUANGZHOU BUREAU CSG EHV POWER TRANSMISSION
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Problems solved by technology

The frequent occurrence of these situations will lead to damaged operations at the component level, and even further lead to failures
Among them, these typical degradation problems will lead to the evolution of conducted and radiated electromagnetic interference (EMI), further aggravating the aging of the device and seriously shortening its lifetime
[0003] At present, the aging EMI test for power MOSFET devices and high-frequency JFET devices has been proposed, but the related aging EMI test for IGBT has not yet been proposed

Method used

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  • Aging method of IGBT switch of buck converter circuit under power frequency
  • Aging method of IGBT switch of buck converter circuit under power frequency
  • Aging method of IGBT switch of buck converter circuit under power frequency

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Embodiment Construction

[0035] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0036] The invention proposes an aging method for an IGBT switch of a step-down converter circuit under power frequency, and aging the IGBT used in the chopper unit by increasing the collector-emitter current of the load. This important value of I CE The current causes an increase in the junction temperature, reaching 200°C, exceeding the maximum junction temperature value. Accelerated aging test technique on IGBT transistors to explore the experimental study of the effect of accelerated aging on the evolution of conducted EMI in static converter circuits.

[0037] Further, many limitations on IGBTs are proposed - IGBT high current value (≥4.5A), high switching frequency (≥50kHz). These conditions will ensure its operation at hi...

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Abstract

The invention discloses a method for aging an IGBT switch of a buck converter circuit under power frequency, which is characterized in that the IGBT used in a chopping unit is aged by increasing the collector-emitter current of a load, and the ICE current of the important value leads to the increase of the junction temperature, which reaches 200 DEG C and exceeds the maximum junction temperature value. According to the invention, the blank of the IGBT device in the aspect of aging EMI test is filled; compared with other types of aging methods of power electronic devices for obtaining electromagnetic radiation, the circuit is simple, redundant power accelerated circulation is not needed, the method is economic and rapid, the efficiency can be effectively improved, and the manpower and timecost are saved.

Description

technical field [0001] The invention relates to the technical field of switching device testing, in particular to an aging method for an IGBT switch of a step-down converter circuit under power frequency. Background technique [0002] Active components (MOSFET, IGBT, JFET...) used in static converter circuits have many harsh stress environments during operation, such as: high voltage, high current, high-speed switching frequency and high junction temperature. The frequent occurrence of these situations will lead to damaged operations at the component level, and even further lead to failures. Among them, these typical degradation problems will lead to the evolution of conducted and radiated electromagnetic interference (EMI), which further aggravates the aging of the device and seriously shortens its lifetime. [0003] At present, the aging EMI test for power MOSFET devices and high-frequency JFET devices has been proposed, but the related aging EMI test for IGBT has not yet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R29/08
CPCG01R29/0814G01R31/2617G01R31/2642
Inventor 徐攀腾朱博宋述波周登波李建勋谷裕樊友平
Owner GUANGZHOU BUREAU CSG EHV POWER TRANSMISSION
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