Method and system for detecting MOS transistor

Abstract

The invention discloses a method and system for detecting a MOS transistor. The system comprises a computer, the computer is connected with an upper computer, the upper computer is connected with a high-temperature room, a lower computer is arranged in the high-temperature room, the upper computer is connected with the lower computer, the lower computer is connected with a test board, and the computer comprises a database, printing equipment and an audible and visual alarm. The upper computer comprises a first single-chip microcomputer, a temperature control module, a nixie tube and a first compiler, the lower computer comprises a second single-chip microcomputer, a second compiler, an infrared thermometer and an analog switch, the test board comprises a clamping device, a temperature regulator and a resistance tester, and preferably, the computer is connected with the upper computer through a USB interface. According to the invention, the effect of automatic aging detection of the MOStube is realized, the labor cost is greatly saved, the accuracy of a detection value is ensured, the detection efficiency is effectively improved, the effect of large-batch detection is realized, andthe practicability is good.

Description

technical field [0001] The invention relates to the technical field of MOS tube detection, in particular to a method and system for detecting a MOS tube. Background technique [0002] MOS tubes generally refer to PMOS tubes. PMOS refers to an n-type substrate, a p-channel, and a MOS transistor that transports current by the flow of holes. Metal-oxide-semiconductor field-effect (MOS) transistors can be divided into two categories: N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and P-channel respectively. Drain, there is no conduction between the two poles, and when sufficient positive voltage is applied to the source (the gate is grounded), the N-type silicon surface under the gate presents a P-type inversion layer, which becomes a channel connecting the source and drain . Changing the gate voltage can change the hole density in the channel, thus changing the resistance of...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a method and system for detecting MOS tubes, which solves the problem that it is difficult to perform automatic aging detection on MOS tubes

Images