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Semiconductor device and method for fabricating the same

一种半导体、元件的技术，应用在该半导体元件的制备领域，能够解决影响电子特性、品质以及良率等问题

Pending Publication Date: 2021-03-26
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the process of shrinking dimensions, different problems are added and affect the final electronic characteristics, quality and yield
Therefore, there are still ongoing challenges in achieving improved quality, yield and reliability

Method used

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  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0134] Specific examples of components and configurations are described below to simplify embodiments of the present disclosure. Of course, these examples are for illustration only, and are not intended to limit the scope of the present disclosure. For example, where a first component is formed on a second component, it may include embodiments where the first and second components are in direct contact, or may include an additional component formed between the first and second components, An embodiment such that the first and second parts do not come into direct contact. Additionally, embodiments of the present disclosure may repeat reference numerals and / or letters in many instances. These repetitions are for the purpose of simplicity and clarity and, unless otherwise indicated in the context, do not in themselves imply a specific relationship between the various embodiments and / or configurations discussed.

[0135] Also, for ease of illustration, spaces such as "beneath", ...

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Abstract

The present application discloses a semiconductor device with and a method for fabricating a semiconductor device. The semiconductor device includes a substrate having first regions and second regions; a plurality of capacitor contacts positioned over the second regions, at least one of the capacitor contacts having a neck portion and a head portion over the neck portion, wherein an upper width ofthe head portion is larger than an upper width of the neck portion; a plurality of bit line contacts positioned over the first regions and a plurality of bit lines positioned over the bit line contacts; a plurality of capacitor plugs disposed over the capacitor contacts, wherein at least one of the plurality of capacitor plugs includes a plurality of nanowires, a conductive liner disposed over the nanowires, and a conductor disposed over the conductive liner; and a plurality of capacitor structures disposed respectively over the capacitor plugs.

Description

[0001] This disclosure claims priority and benefits to U.S. Formal Application No. 16 / 582,337, filed September 25, 2019, the contents of which are hereby incorporated by reference in their entirety. technical field [0002] The present disclosure relates to a semiconductor element and a method for manufacturing the semiconductor element. In particular, it relates to a semiconductor element with a nanowire plug, and a method for preparing the semiconductor element with a cladding layer. Background technique [0003] Semiconductor components are used in various electronic applications, such as personal computers, mobile phones, digital cameras, or other electronic devices. The size of semiconductor devices is gradually reduced to meet the increasing demand for computing power. However, during the process of scaling down, different problems are added and affect the final electronic characteristics, quality and yield. Therefore, challenges remain in achieving improved quality,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
CPCH10B12/315H10B12/02H10B12/033H10B12/0335H01L21/02603H01L21/02532H01L21/02639H01L21/02653H10B12/482H10B12/34H10B12/485
Inventor 蔡子敬
Owner NAN YA TECH
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