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Metrology apparatus

A lithography equipment and data technology, applied in the direction of optomechanical equipment, microlithography exposure equipment, optics, etc., can solve the problems of uncorrectable, high-order inter-field deformation patterns, etc.

Pending Publication Date: 2021-03-30
ASML NETHERLANDS BV
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Problems solved by technology

However, intra-field stresses can also lead to higher-order field-to-field deformation patterns (i.e., across multiple dies) that are not correctable by currently available wafer alignment models.
Furthermore, higher order field-to-field deformation patterns are very difficult to characterize with current overlay measurements because the overlay measurement targets are mostly placed in the scribe lines and most of the deformation occurs in the product area (e.g. between the scribe lines)

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  • Metrology apparatus
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[0044] In general, disclosed herein are methods and apparatus for determining IPD across a substrate. In an exemplary arrangement, this may be achieved by determining in-field (or in-zone) stress data specifying a local stress distribution across a field and based on the in-field stress data determining a field specifying a stress distribution across a plurality of fields Inter-stress data to achieve. The IPD can then be determined based on the interfield stress data.

[0045] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (e.g. having a wavelength of 365 nm, 248 nm, 193 nm, 157 nm or 126 nm) and extreme ultraviolet radiation (EUV, e.g. having wavelengths in the range of about 5 nm to 100 nm).

[0046] As used herein, the terms "reticle" or "patterning device" may be broadly interpreted to refer to a general patterning device that can be used to impart an incident radiation beam to ...

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Abstract

Methods and apparatus for determining in-plane distortion (IPD) across a substrate comprising a plurality of patterned regions. The methods comprise: obtaining intra-region data indicative of a localstress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from European application 18190150.5 filed on 22 August 2018 and the entire content of said European application is hereby incorporated by reference. technical field [0003] The present invention relates to a metrology apparatus and associated method for determining in-plane deformation (IPD) across a substrate, such as a semiconductor wafer. Background technique [0004] A lithographic apparatus is a machine configured to apply a desired pattern onto a substrate. Lithographic apparatus may be used, for example, in integrated circuit (IC) fabrication. A lithographic apparatus can, for example, project a pattern (also often referred to as a "design layout" or "design") at a patterning device (such as a mask) onto a radiation-sensitive material (anti- etchant) layer. The projected pattern may form part of a process to fabricate the structure on the substrate. [0005] To project a pa...

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70633G03F7/70783G03F7/70433G03F7/70616
Inventor L·P·范戴克R·J·F·范哈恩S·辛格I·马拉克霍夫斯基R·H·J·奥腾A·辛格
Owner ASML NETHERLANDS BV
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