Deep ultraviolet LED based on AlGaN and provided with superlattice quantum barriers with different aluminum components
A quantum barrier and superlattice technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high mobility, low hole concentration, and reduced spatial overlap between electrons and holes, and improve radiation recombination efficiency. , the effect of improving the radiation recombination rate and reducing the leakage of holes
Active Publication Date: 2021-04-06
SOUTH CHINA NORMAL UNIVERSITY
View PDF11 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In DUV LEDs, p-AlGaN is difficult to dope, resulting in a much lower hole concentration than electron concentration
The effective mass of electrons is small, and the moving rate is high, so it is easy to leak from the active region
Although the impact of hole leakage is not as great as that of electron leakage, studies have shown that the impact of hole leakage on the performance of DUV LEDs cannot be ignored.
The polarized electric field of AlGaN materials with high Al composition is very strong, which causes the quantum confinement Stark effect, and finally reduces the space overlap rate of electrons and holes, and reduces the radiative recombination rate.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0041] The specific implementation of the present invention will be further described below in conjunction with examples, but the implementation and protection of the present invention are not limited thereto. It should be pointed out that, if there are any processes in the following that are not specifically described in detail, those skilled in the art can realize or understand with reference to the prior art.
[0042] figure 1 It is the structural diagram of the AlGaN-based deep-ultraviolet LED with superlattice quantum barriers of different aluminum compositions provided in the embodiment.
[0043] A deep ultraviolet LED based on AlGaN superlattice quantum barriers with different aluminum components, which consists of a substrate 1, an N-type electronic layer 2, a superlattice quantum barrier active region 3, and an electron blocking layer 4 from bottom to top. 1. The P-type hole layer 5 and the contact layer 6 are stacked and formed; the n-type ohmic electrode 8 is drawn...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention particularly relates to a deep ultraviolet LED based on AlGaN and provided with superlattice quantum barriers with different aluminum components. The LED sequentially comprises a sapphire bottom, an N-type layer, a superlattice quantum barrier active region with different aluminum components, an electron blocking layer, a P-type layer and a contact layer from bottom to top, and further comprises an n-type ohmic electrode led out from the N-type layer and a p-type ohmic electrode led out from the contact layer. The quantum barrier in the quantum well active region is designed into the superlattice quantum barrier with different aluminum components, hole leakage is inhibited, an electrostatic field in the quantum well is weakened, and finally the radiative recombination rate of electrons and holes in the active region is improved.
Description
technical field [0001] The invention relates to the field of photodiodes, in particular to an AlGaN-based deep ultraviolet LED with superlattice quantum barriers of different aluminum components. Background technique [0002] Because AlGaN deep ultraviolet LEDs have very important application value in computer data storage, sterilization, water and air purification, biomedicine, environmental protection and other fields, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have attracted widespread attention. . [0003] However, the efficiency of DUV LEDs cannot meet people's requirements at present. There are many factors that affect the optical and electrical properties of DUV LEDs, such as low hole injection rate, severe carrier leakage, quantum confinement Stark effect, and weak carrier confinement ability. In DUV LEDs, p-AlGaN is difficult to dope, resulting in a much lower hole concentration than electron concentration. The electrons have a small effective ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L33/06H01L33/32H01L33/14
CPCH01L33/06H01L33/32H01L33/145
Inventor 谷怀民刘娜娜杨先啓廖泽兵
Owner SOUTH CHINA NORMAL UNIVERSITY