An algan-based deep ultraviolet LED with superlattice quantum barriers of different aluminum compositions

Abstract

The invention specifically relates to an AlGaN-based deep-ultraviolet LED with superlattice quantum barriers of different aluminum components. The LED includes a sapphire sinking bottom, an N-type layer, a superlattice quantum barrier active region with different aluminum components, an electron blocking layer, a P-type layer and a contact layer from bottom to top, and also includes n-layers drawn from the N-type layer. type ohmic electrodes and p-type ohmic electrodes drawn from the contact layer. The quantum barrier in the quantum well active region is designed as a superlattice quantum barrier with different aluminum components, which suppresses the leakage of holes, weakens the electrostatic field in the quantum well, and finally improves the electron and hole in the active area. The radiative recombination rate in the region.

Description

technical field [0001] The invention relates to the field of photodiodes, in particular to an AlGaN-based deep ultraviolet LED with superlattice quantum barriers of different aluminum components. Background technique [0002] Because AlGaN deep ultraviolet LEDs have very important application value in computer data storage, sterilization, water and air purification, biomedicine, environmental protection and other fields, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have attracted widespread attention. . [0003] However, the efficiency of DUV LEDs cannot meet people's requirements at present. There are many factors that affect the optical and electrical properties of DUV LEDs, such as low hole injection rate, severe carrier leakage, quantum confinement Stark effect, and weak carrier confinement ability. In DUV LEDs, p-AlGaN is difficult to dope, resulting in a much lower hole concentration than electron concentration. The electrons have a small effective ...

AI Technical Summary

Problems solved by technology

In DUV LEDs, p-AlGaN is difficult to dope, resulting in a much lower hole concentration than electron concentration

The effective mass of electrons is small, and the moving rate is high, so it is easy to leak from the active region

Although the impact of hole leakage is not as great as that of electron leakage, studies have shown that the impact of hole leakage on the performance of DUV LEDs cannot be ignored.

The polarized electric field of AlGaN materials with high Al composition is very strong, which causes the quantum confinement Stark effect, and finally reduces the space overlap rate of electrons and holes, and reduces the radiative recombination rate.

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