A kind of algan-based ultraviolet LED epitaxial structure and preparation method thereof
An epitaxial structure, N-type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of electron leakage and low hole injection efficiency, and achieve the effects of improving performance, weakening electrostatic field, and suppressing electron leakage
Active Publication Date: 2020-03-31
UNILUMIN GRP
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] In view of this, the technical problem to be solved by the present invention is to provide an AlGaN-based ultraviolet LED epitaxial structure and its preparation method to solve the polarization effect existing between the electron blocking layer and the multi-quantum well layer in the ultraviolet LED in the prior art Lead to energy band bending, resulting in electron leakage and low hole injection efficiency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0029] The present invention provides an AlGaN-based ultraviolet LED epitaxial structure, such as figure 1 As shown, it includes a substrate, a buffer layer, an N-type aluminum gallium nitride layer, a multi-quantum well layer, an electron blocking layer, a P-type aluminum gallium nitride layer, and a P-type gallium nitride layer arranged from the bottom up; the electron blocking layer Layers such as figure 2 As shown, by n Al x Ga 1-x N / Al y Ga 1-y N / Al z Ga 1-z N layers and n-1 spacer layers Al m Ga 1-m It is composed of N; the values of X...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention, which belongs to the technical field of semiconductor light-emitting devices, discloses an AlGaN-based ultraviolet LED epitaxial structure and a preparation method thereof. The AlGaN-based ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, an N type aluminum-gallium-nitride layer, a mult-quantum well layer, an electron blocking layer, a P type aluminum-gallium-nitride layer and a P type gallium nitride layer that are arranged successively from bottom to top. The electron blocking layer includes n AlxGa(1-x)N / AlyGa(1-y)N / AlzGa(1-z)N layers and n-1 spacer layers AlmGa(1-m)N, wherein the x and z are linear changing values and the y and m are fixed values, and the y is larger than 0 and is less than or equal to 0.8, the y is larger than or equal to the m,and the n is larger than or equal to 1. According to the structure disclosed by the invention, the energy band bending is reduced, the electron leakage is reduced, and effective hole injection is improved, so that the internal quantum efficiency and luminous efficiency of the ultraviolet LED are enhanced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlGaN-based ultraviolet LED epitaxial structure and a preparation method thereof. Background technique [0002] With the continuous development and maturity of GaN-based light emitting diode (Light Emitting Diode, LED) preparation technology, ultraviolet light emitting diodes have great application value in many fields, such as air and water purification, biomedicine, ultraviolet communication and so on. And the UV LED has the advantages of long life, high energy, uniform irradiation, high efficiency, small size and no toxic substances. Therefore, researchers have gradually shifted their research focus to UV LEDs. [0003] Group III nitride AlGaN material is currently the main material for the preparation of ultraviolet LED epitaxial wafers. Its forbidden band width is suitable for the preparation of ultraviolet-emitting photoelectric devices, and AlGaN alloy materials...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/145H01L33/325
Inventor 李光赵平林廖加成白耀平李述体
Owner UNILUMIN GRP