Sintering method of semi-conductor glaze layer for improving cooperation between semi-conductor components and central electrode
A technology of center electrode and sintering method, applied in spark gap parts, circuits, electrical components, etc., can solve the problems of high hardness of semiconductor glaze layer, uneven glaze layer, increased insulation resistance, etc., to avoid the increase of insulation resistance , The operation is not difficult, and the effect of improving the ignition performance
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[0024] The semiconductor glaze layer 300 sintering method for improving the matching degree of the semiconductor component and the central electrode is to firstly make the central electrode wax mold 200 according to the shape and size of the central electrode, then fit the porcelain tube 100 with the central electrode wax mold 200, and connect the outer cone surface of the central electrode with the central electrode wax mold 200. The pre-configured semiconductor enamel is injected into the gap between the inner cones of the porcelain tube 100. After the semiconductor enamel cools naturally, it is placed on the high-alumina tiles, and the high-alumina tiles of the porcelain tube 100 are placed at the speed of one high-alumina tile every 15 minutes. The tiles are fed into a high temperature furnace for sintering.
[0025] Among them, 38-40 parts of potassium feldspar, 42-44 parts of quartz, 7-8 parts of kaolin, 3-4 parts of magnesium carbonate, 5-7 parts of calcium carbonate are...
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