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Sintering method of semi-conductor glaze layer for improving cooperation between semi-conductor components and central electrode

A technology of center electrode and sintering method, applied in spark gap parts, circuits, electrical components, etc., can solve the problems of high hardness of semiconductor glaze layer, uneven glaze layer, increased insulation resistance, etc., to avoid the increase of insulation resistance , The operation is not difficult, and the effect of improving the ignition performance

Active Publication Date: 2022-04-01
四川泛华航空仪表电器有限公司
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AI Technical Summary

Problems solved by technology

During the sintering process, the glaze layer is easy to flow before it is cured, forming irregular glaze nodules, resulting in uneven glaze layer, and the fired semiconductor glaze layer is high in hardness and brittle, and it is difficult to remove it by grinding, resulting in The semiconductor part and the center electrode do not fit tightly
When the fit between the center electrode and the semiconductor component is not tight, there are some tiny "gap" in the contact part between the semiconductor component and the center electrode, and the existence of these "gap" will increase the insulation resistance from the center electrode to the side electrode, The result of the increase in insulation resistance is that a larger breakdown voltage is required, resulting in that when the pulse of a given voltage from the ignition device is transmitted to the discharge end of the ignition tip, it cannot be effectively ignited

Method used

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  • Sintering method of semi-conductor glaze layer for improving cooperation between semi-conductor components and central electrode
  • Sintering method of semi-conductor glaze layer for improving cooperation between semi-conductor components and central electrode

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Embodiment 1

[0024] The semiconductor glaze layer 300 sintering method for improving the matching degree of the semiconductor component and the central electrode is to firstly make the central electrode wax mold 200 according to the shape and size of the central electrode, then fit the porcelain tube 100 with the central electrode wax mold 200, and connect the outer cone surface of the central electrode with the central electrode wax mold 200. The pre-configured semiconductor enamel is injected into the gap between the inner cones of the porcelain tube 100. After the semiconductor enamel cools naturally, it is placed on the high-alumina tiles, and the high-alumina tiles of the porcelain tube 100 are placed at the speed of one high-alumina tile every 15 minutes. The tiles are fed into a high temperature furnace for sintering.

[0025] Among them, 38-40 parts of potassium feldspar, 42-44 parts of quartz, 7-8 parts of kaolin, 3-4 parts of magnesium carbonate, 5-7 parts of calcium carbonate are...

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Abstract

The invention relates to the field of sintering technology, and specifically discloses a semiconductor glaze layer sintering method for improving the matching degree of semiconductor components and a central electrode, which is used for sintering a semiconductor glaze layer on a porcelain tube, and is characterized in that: firstly, the center electrode wax is made according to the shape and size of the center electrode Then fit the porcelain tube with the wax mold of the center electrode, inject the pre-configured semiconductor enamel into the gap between the outer cone surface of the center electrode and the inner cone surface of the porcelain tube, and put it into the furnace for heating after the semiconductor enamel cools naturally sintering. The semiconductor glaze layer sintered by the method for sintering the semiconductor glaze layer can improve the matching degree between the semiconductor component and the central electrode, thereby avoiding the increase of the insulation resistance between the central electrode and the semiconductor component due to the poor coordination between the central electrode and the semiconductor component, and improving the electric resistance. Mouth pyrogenicity.

Description

technical field [0001] The invention relates to the technical field of sintering, in particular to a method for sintering a semiconductor glaze layer to improve the matching degree between a semiconductor component and a central electrode. Background technique [0002] The aircraft engine ignition system relies on the high-energy pulsating voltage emitted from the ignition device, which is transmitted to the center electrode of the ignition nozzle through the ignition cable, and the center electrode of the ignition nozzle discharges to the side electrode through the semiconductor component, breakdown the surrounding air, and generates high-energy electricity. The spark ignites the fuel-air mixture in the engine, thus starting the aeroengine. [0003] The degree of cooperation between the center electrode and the semiconductor components is an important factor affecting the discharge performance of the nozzle. When the center electrode and the semiconductor components have a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01T21/02H01T1/24
CPCH01T21/02H01T1/24
Inventor 范博全牟孙攀任洋
Owner 四川泛华航空仪表电器有限公司
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