Semiconductor structure and forming method thereof

A semiconductor and conductor technology, applied in the field of flash memory, can solve the problems of reducing the reliability and manufacturing yield of memory devices

Pending Publication Date: 2021-04-09
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Voids in the floating gate can reduce the reliability and manufacturing yield of memory devices

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0062] The following describes the present disclosure more fully with reference to the drawings of the embodiments of the present invention. However, the present disclosure can also be realized in various different embodiments, and should not be limited to the examples described herein. The thicknesses of layers and regions in the drawings may be exaggerated for clarity, and the same or similar reference numerals designate the same or similar elements in the drawings.

[0063] Figure 1A-Figure 1L According to some embodiments of the present invention, schematic cross-sectional views showing different stages of forming a semiconductor structure are shown. According to some embodiments, a semiconductor structure 100 is provided, such as Figure 1A shown. According to some embodiments, the semiconductor structure 100 includes a semiconductor substrate 102 . In some embodiments, the semiconductor substrate 102 may be an elemental semiconductor substrate, such as a silicon subs...

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Abstract

The invention provides a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a semiconductor substrate, forming a sacrificial layer on the semiconductor substrate, etching the sacrificial layer to form a sacrificial pattern, etching the semiconductor substrate by using the sacrificial pattern as an etching mask to form an active region of the semiconductor substrate, and trimming the sacrificial pattern; and replacing the trimmed sacrificial pattern with a gate electrode.

Description

technical field [0001] The present disclosure relates to semiconductor structures, and more particularly to flash memory. Background technique [0002] In recent years, due to the advantages of high density, low cost, rewritable and electrical erasability, flash memory has become the mainstream of non-volatile memory components and is widely used in Various portable electronic products, such as notebook computers, digital players, digital cameras, mobile phones, game consoles and other related portable electronic products. [0003] With the shrinking of memory technology, the general flash memory technology will face some challenges. For example, a void is formed in a floating gate. Voids in the floating gate reduce the reliability and manufacturing yield of the memory device. Therefore, how to provide a method for forming a flash memory to reduce the possibility of forming voids in the floating gate will become an important subject. Contents of the invention [0004] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11521H01L21/762H10B41/30
CPCH01L21/76224H10B41/30
Inventor 李书铭邱永汉刘嘉鸿欧阳自明
Owner WINBOND ELECTRONICS CORP
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