Preparation method of planar TEM sample

Abstract

The invention discloses a preparation method of a planar TEM sample. The preparation method comprises the following steps that: a planar TEM sample containing a to-be-detected area is acquired, the substrate surface of the planar TEM sample has a shallow recess and is not thinned by an argon ion beam; and argon ion beam thinning is carried out on the planar TEM sample until a through hole is formed in the surface of the planar TEM sample and the edge of the shallow recess is in contact with the to-be-detected area, so as to obtain a final planar TEM sample. According to the method, the shallow recess is formed in the substrate surface of the planar TEM sample; the planar TEM sample with the shallow recess formed in the substrate surface is subjected to argon ion beam thinning, so that the problem that the to-be-detected area on the surface of the planar TEM sample is removed in the thinning process is effectively solved, and the preparation success rate and the detection efficiency of the planar TEM sample are greatly improved; and therefore, the preparation cost of the planar TEM sample is reduced, and the preparation time is shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a planar TEM sample. Background technique [0002] With the development and application of nanotechnology, TEM (Transmission Electron Microscope, referred to as TEM) has increasingly become the main tool for characterizing nanomaterials and devices. It is used to observe the microstructure of materials, such as crystal morphology, Multi-phase crystallization and lattice defects, etc., the point resolution can reach 0.1nm; it is also used to detect the morphology, size and characteristics of thin films that make up semiconductor devices. After the TEM sample to be tested is placed in the TEM observation room, the main working process and principle of the TEM are as follows: the high-energy electron beam emitted by the electron gun is focused by the lens and then penetrates the TEM sample and occurs scattering, absorption, interference and...

AI Technical Summary

Problems solved by technology

According to the incident angle, incident energy, and thinning time of the argon ion beam, the thinning rate and thinning thickness of the area above the area to be measured A are almost equal to those of other areas of the planar TEM sample 1. Planar TEM sample 1 is uniformly thinned, so it is easy to appear such as figure 2 The situation shown in d that the region A to be measured of the planar TEM sample 1 is completely removed during the final process of argon ion beam thinning is also prone to cause the planar TEM sample 1 to be broken due to the absence of a high-strength wall thickness support

In this way, it is no longer possible to observe and test the planar TEM sample 1, and the prepared sample becomes a waste sample, which requires re-preparation of the sample.

In this case, it takes a lot of time and energy just to prepare the sample, which greatly increases the time and cost of sample preparation, and also reduces the speed and efficiency of TEM testing.

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