Three-position TSV based on carbon nanotubes and parameter extraction method thereof

A carbon nanotube and parameter extraction technology, applied in the field of microelectronics, to achieve good transmission characteristics, improve chip integration, and reduce process costs

Pending Publication Date: 2021-04-13
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the area occupied by TSVs is much larger than the on-chip channel
Furthermore, the number of TSVs within any ...

Method used

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  • Three-position TSV based on carbon nanotubes and parameter extraction method thereof
  • Three-position TSV based on carbon nanotubes and parameter extraction method thereof
  • Three-position TSV based on carbon nanotubes and parameter extraction method thereof

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Embodiment 1

[0073] figure 1 It is a schematic structural diagram of a three-position TSV based on carbon nanotubes provided by an embodiment of the present invention. The three-bit TSV includes a TSV structure 1 disposed in a substrate and three signal pads 2 disposed on top of the TSV structure 1 . The TSV structure 1 includes a through hole 11 opened in the substrate and a plurality of bundles of carbon nanotubes 12 uniformly filled inside the through hole 11 . In this embodiment, the carbon nanotubes 12 are multi-walled carbon nanotubes. What needs to be understood is that carbon nanotubes can be regarded as graphene sheets rolled up, and can be divided into single-walled carbon nanotubes (or single-walled carbon nanotubes, Single-walledCarbon nanotubes, SWCNTs) according to the number of layers of graphene sheets ) and multi-walled carbon nanotubes (or multilayer carbon nanotubes, Multi-walled Carbonnanotubes, MWCNTs). Single-walled carbon nanotubes refer to rolling only one layer ...

Embodiment 2

[0077] On the basis of the above embodiments, this embodiment provides a method for extracting parameters of a three-position TSV of carbon nanotubes. See figure 2 , figure 2 It is a flow chart of a method for extracting parameters of a carbon nanotube-based three-position TSV provided by an embodiment of the present invention. The method includes the following steps:

[0078] S1: Use simulation software to build a physical model of a three-dimensional TSV based on carbon nanotubes;

[0079] The three-bit TSV includes a TSV structure 1 disposed in a substrate and three signal pads 2 disposed on top of the TSV structure 1 . The TSV structure 1 includes a through hole 11 opened in the substrate and a plurality of bundles of carbon nanotubes 12 uniformly filled inside the through hole 11 . In the specific model building process, first build a cuboid model in HFSS software as the silicon substrate, and etch two cylinders in the silicon substrate as through-silicon vias, beca...

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Abstract

The invention discloses a three-dimensional TSV based on carbon nanotubes and a parameter extraction method thereof. The three-dimensional TSV comprises a TSV structure arranged in a substrate and three signal pads arranged at the top of the TSV structure, and the TSV structure comprises a through hole formed in the substrate and multiple beams of carbon nanotubes uniformly filled in the through hole; and the three signal pads are laid at different positions of the top of the TSV structure at intervals and are respectively communicated with the multi-walled carbon nanotubes below the three signal pads so as to form three signal transmission channels on one TSV structure. According to the three-position TSV, one TSV structure can transmit three independent signals at the same time through the three signal pads, the number of I/O pins between an upper chip and a lower chip which are connected through the three-position TSV is doubled, the integration degree of the chips is improved, the process cost is reduced, and the three-position TSV has a better transmission characteristic.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a three-position TSV based on carbon nanotubes and a parameter extraction method thereof. Background technique [0002] Three-dimensional (3D) integration technology can realize heterogeneous heterogeneous integration while reducing costs, which provides a broad development platform for the realization of Moore's law, and promotes the development of different materials (silicon, III-V compounds, carbon nanotubes, etc.) and processes. (memory, logic circuits, radio frequency circuits, micro-mechanical systems, etc.) are integrated into one chip. TSV (Through Silicon Via) technology promotes the development of three-dimensional integrated circuits, which can reduce the limitations of traditional planar integrated circuits, shorten interconnect lengths, increase integration density, and reduce power consumption. [0003] As a conductive channel connecting the u...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/538G06F30/398G06F30/367G06F111/14
CPCH01L21/76898H01L23/5384G06F30/398G06F30/367G06F2111/14
Inventor 吕红亮关文博严思璐赵冉冉张玉明
Owner XIDIAN UNIV
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