60results about "CAD with nanotechnology" patented technology

The invention discloses a multi-scale simulation method for mechanical behaviors of a multi-phase composite material, and belongs to the field of multidisciplinary intersection of computational material science, analog simulation, high-throughput calculation and the like. Various physical property parameters needed by finite element simulation of the macroscopic scale can be obtained through calculation of the first principle of the nanoscopic scale, molecular dynamics simulation of the microcosmic scale and thermodynamic calculation of the mesoscopic scale, and the physical property parameters comprise elastic-plastic physical parameters of all phases in the composite material at different temperatures and different grain sizes and the like. A real material tissue structure is obtained byutilizing a focused ion beam experiment and image processing introduction. Through parameter coupling and parameter transmission among scale calculation results and combination with the structure ofthe material, mechanical behaviors such as stress-strain relationship, stress distribution and evolution and plastic deformation of the multi-phase composite material under complex stress and different temperatures can be simulated.

An integrated circuit design tool includes a cell library. The cell library includes entries for a plurality of cells, entries in the cell library including specifications of particular cells in a computer executable language. At least one entry in the cell library can comprise a specification of physical structures and timing parameters of a plurality of transistors and an interconnect; wherein a transistor in the plurality has a channel comprising one or more nanowires or 2D material strips arranged in parallel, and the interconnect comprises one or more nanowires or 2D material strips arranged in parallel and connected to terminals of more than one of the transistors in the plurality of transistors. An integrated circuit including the plurality of transistors and the interconnect is described.

An integrated circuit design tool includes a cell library. The cell library includes entries for a plurality of cells, entries in the cell library including specifications of particular cells in a computer executable language. At least one entry in the cell library can comprise a specification of physical structures and timing parameters of a circuit including a first transistor, a second transistor, and an interconnect connecting a terminal of the first transistor to a terminal of the second transistor, the interconnect comprising one or more nanowires or 2D material strips arranged in parallel. An integrated circuit including the circuit is described.

An integrated circuit design tool includes a cell library. An entry in the cell library comprises a specification of the cell including a first transistor and a second transistor. The first transistor can include a first set of nanowires or 2D material strips arranged in parallel to form a channel structure, and a gate conductor disposed across the first set of nanowires or 2D material strips. The second transistor can include a second set of nanowires or 2D material strips arranged in parallel to form a channel structure, and a gate conductor disposed across the first set of nanowires or 2D material strips. The number of nanowires or 2D material strips in the first set can be different from the number of nanowires or 2D material strips in the second set, so that the drive power of the individual transistors can be set with finer granularity.

Computer-aided methods for simulating confined nanodevices are disclosed. In example implementations, atomic-scale model of the nanodevices are generated so that dimensions and materials are specified. Then, band structures which comprise wave functions and Eigen energies are calculated using First Principles Methods (FPM). Effective mass modeled which comprise wave functions and Eigen energies are generated. After that, spatial wave functions of the calculated FPM band structures are mapped to the generated effective mass band structures wave functions by considering global behavior. In response to the mapping, generated effective mass models are fitted to calculated FPM energies so that approximate electronic band structures of the confined nanodevices are modeled. Computer programs for carrying out the methods, data media and computer systems are also disclosed.