Characterization method and application of fluctuation introduced by single-particle irradiation

Abstract

The invention discloses a characterization method and application of fluctuation introduced by single-particle irradiation. Threshold voltage distribution of a plurality of devices with different sizes before and after single-particle irradiation is tested and extracted to acquire threshold voltage fluctuation caused by single-particle irradiation. Then a process fluctuation model is corrected, and the circuit design margin requirement of work in the radiation environment is corrected. A calculation method is simple, an application range is wide, the application requirements of different technical generations and different radiation environments can be met, the circuit design margin requirement of working in the radiation environment is corrected, and the working reliability of the nanoscale integrated circuit in the radiation environment is improved.

Description

technical field [0001] The invention relates to a characterization method for fluctuations introduced by single-particle irradiation, which belongs to the field of reliability of microelectronic devices. Background technique [0002] With the rapid development of integrated circuit technology, the feature size of devices has been reduced to the nanometer scale. The fluctuation of nanoscale devices has become an important factor affecting the characteristics of devices and circuits. Taking nanoscale MOSFET as an example, fluctuations introduced by process fluctuations will affect the performance of the device. For example, the number of dopant atoms in the channel of a MOS device is small, and the number and position distribution of impurity atoms will bring significant differences in the threshold voltage, on-state current and other parameters of the device. This random fluctuation is usually called random doping fluctuations. In addition, common fluctuations include line...

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Problems solved by technology

On the other hand, the electron-hole pairs generated by the ionization of charged particles may be trapped by traps in the oxide layer to produce micro-dose effects, or cause displacement damage in semiconductor materials, which will lead to degradation of device DC characteristics, such as threshold voltage drift, etc. , leading to increased IC mismatch, performance degradation and even functional failure

At present, there have been a lot of in-depth studies on the transient effects of single events, micro-dose effects, and displacement damage. However, the i

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