A Characterization Method and Application of Fluctuations Induced by Single-particle Irradiation

Abstract

The invention discloses a method and application for characterizing fluctuations induced by single particle irradiation. The threshold voltage fluctuations caused by single particle irradiation are obtained by testing and extracting the threshold voltage distributions of multiple devices of different sizes before and after single particle irradiation. Then, the process fluctuation model is corrected to correct the circuit design margin requirements for working in a radiation environment. The invention has a simple calculation method and wide application range, can meet the application requirements of different technology generations and different radiation environments, correct the circuit design margin requirements for working in the radiation environment, and improve the reliability of the nano-scale integrated circuit in the radiation environment.

Description

technical field [0001] The invention relates to a method for characterizing fluctuations introduced by single particle irradiation, and belongs to the field of reliability of microelectronic devices. Background technique [0002] With the rapid development of integrated circuit technology, the device feature size has been reduced to the nanometer scale. The fluctuation of nanoscale devices has become an important factor affecting the characteristics of devices and circuits. In the case of nanoscale MOSFETs, fluctuations introduced by process fluctuations can affect device performance. For example, the number of dopant atoms in the channel of a MOS device is small, and the difference in the number and positional distribution of dopant atoms will bring about significant differences in parameters such as threshold voltage and on-state current of the device. This random fluctuation is usually called random doping. ups and downs. In addition, common fluctuations also include l...

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Problems solved by technology

On the other hand, the electron-hole pairs generated by the ionization of charged particles may be trapped by traps in the oxide layer to produce micro-dose effects, or cause displacement damage in semiconductor materials, which will lead to degradation of device DC characteristics, such as threshold voltage drift, etc. , leading to increased IC mismatch, performance degradation and even functional failure

At present, there have been a lot of in-depth studies on the transient effects of single events, micro-dose effects, and displacement damage. However, the impact of single events on device fluctuations is still unclear.

[0004] Due to the randomness of single event incidence and the localized radiation damage, single event irradiation may affect the fluctuation of device characteristics, which in turn affects the design margin requirements of integrated circuits working in radiation environments

At present, the fluctuations caused by single particle radiation are not considered in circuit design, and the reliability of the designed circuit may be reduced due to device fluctuations caused by single particle radiation.

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