Gating tube phase change memory integrated unit, preparation method thereof and phase change memory device

Abstract

The invention discloses a gating tube phase change memory integrated unit, a preparation method thereof and a phase change memory device, and belongs to the technical field of micro-nano electronics. The preparation method comprises the steps of: forming a bottom electrode on a substrate; preparing an insulating layer on the bottom electrode, patterning the insulating layer to obtain nanopores, and exposing the bottom electrode through the nanopores; filling the nanopores with a gate tube material; carrying out ion implantation on one side, far away from the bottom electrode, of the gating tube material so as to form an interface type phase change memory unit on one side, far away from the bottom electrode, in the nanopore; and forming a top electrode on the insulating layer. The preparation of the interface type phase change memory unit is realized by carrying out surface ion implantation treatment on the gate tube material, and meanwhile, the integration of the interface type phase change memory unit and the gate tube unit is realized, so that the process steps are reduced. Since the phase change memory material is obtained by surface ion implantation of the gate tube material, the interface problem of the gate tube unit and the phase change memory unit interface is avoided.

Description

technical field [0001] The invention relates to the field of micro-nano electronics technology, in particular to a gate tube phase-change storage integrated unit, a preparation method thereof, and a phase-change storage device. Background technique [0002] With the exponential growth of the amount of data caused by the development of science and technology, massive data requires faster and larger-capacity storage for processing and storage, and the development of higher-density and higher-speed storage is also an important aspect of the country's current Sino-US relations. Although the traditional non-volatile solid-state storage can meet the basic requirements in terms of capacity through some improvements in process structure, its read and write speed is relatively slow, which makes it fast but small in capacity. There is a large gap between the memory of today's technology, and this gap needs to be filled by new types of storage with larger capacity and faster speed. Th...

AI Technical Summary

Problems solved by technology

[0004] In the traditional manufacturing process, the phase change memory unit is often integrated into the gating tube unit through various thin film deposition technologies such as magnetron sputtering and atomic layer deposition. These processes not only have an obvious lower limit on the vertical size of the unit, but also Moreover, due to the different deposition parameters and deposition processes of different materials, there will be places where the interface between the gate unit and the phase change memory unit is not tightly bonded, resulting in a large number of defects, resulting in bad stress, which affects the phase change memory unit and the gate. Overall performance after unit integration

Images