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Semiconductor structure

A technology of semiconductors and doped regions, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the electrical stability and decline of components, and achieve the effect of maintaining stability and performance and increasing junction area.

Pending Publication Date: 2021-04-23
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Problems solved by technology

However, although this method can moderately increase the junction breakdown voltage of high-voltage diode components, it will cause a decrease in the breakdown voltage of other high-voltage components in the same circuit system, which will affect the electrical stability of these components

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  • Semiconductor structure
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Embodiment 1

[0056]Test of breakdown voltage (BV) of high pressure diode

[0057]SeeFigure 5In the present embodiment, the test of the traditional high pressure diode and BreakDown Voltage (BV) of the high pressure diode (HVDIODE) of the present invention is carried out. The conventional high pressure diode structure here includes high pressure P-well region (HVPW), high pressure N well region (HVNW), and deep N well region (DNW), wherein the high pressure P-well region (HVPW) is a continuous doped region extending over the entire surface. , High-pressure N-well region (HVNW) surrounds high pressure P well regions (HVPW), and deep N well region (DNW) located below high pressure P well regions (HVPW) and high pressure N well regions (HVNW). The high pressure diode structure of the present invention includes a plurality of strip high pressure P well regions (HVPW), a plurality of strip high pressure N well regions (HVNW), high pressure N well region (HVNW), and deep N well regions (DNW), plural Bar-l...

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Abstract

The invention provides a semiconductor structure. The semiconductor structure comprises a substrate, strip-shaped first doped regions, second strip-shaped doped regions, a third doped region and a fourth doped region; the strip-shaped first doped regions are formed in the substrate; the second strip-shaped doped regions are formed in the substrate and located between the first strip-shaped doped regions; the doping types of the first strip-shaped doped regions are opposite to those of the second strip-shaped doped regions; the third doped region is formed in the substrate and surrounds the strip-shaped first doped regions and the strip-shaped second doped regions; the doping type of the third doped region is the same as that of the strip-shaped second doped regions; and the fourth doped region is formed in the substrate and is positioned below the strip-shaped first doped regions, the strip-shaped second doped regions and the third doped region; and the doping type of the fourth doped region is the same as that of the strip-shaped second doped regions. According tot the semiconductor structure of the invention, the junction breakdown voltage of a high-voltage diode element can be improved, and the electrical stability of other high-voltage elements in the same circuit system can be maintained.

Description

Technical field[0001]The present invention relates to a semiconductor structure, particularly a semiconductor structure having a strip-doped region.Background technique[0002]In a circuit system that typically contains high pressure components, when the high pressure diode (HVDIODE) element is added, one N well region is provided below the high pressure diode element, which is used to form the high pressure diode element and the substrate. Interlaced structure. However, the setting of this N-well region can cause the high-pressure dikdown Voltage of the high pressure diode element, resulting in the need for the high pressure diode element to meet the needs of the component.[0003]At present, the concentration of this N-well region is to improve the method of improving the breakdown voltage. However, although this method can moderately improve the attack of the high pressure diode element, it can cause the breakdown voltage of other high pressure components in the same circuit system, ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/861
CPCH01L29/0615H01L29/0684H01L29/861
Inventor 简士杰李家豪杨定儒刘家慎
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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