Low-voltage-drop Schottky rectifier tube

Abstract

The invention provides a low-voltage-drop Schottky rectifier tube which comprises an n-type substrate, a cathode metal layer is arranged below the n-type substrate, an n-type buffer layer and an n-type drift layer are sequentially stacked on the n-type substrate, a Schottky barrier metal layer and an annular first passivation layer are arranged on the n-type drift layer, and an anode metal layer is arranged on the Schottky barrier metal layer. An annular second passivation layer is arranged on the anode metal layer; a first p-type embedded layer, a plurality of second p-type embedded layers and a plurality of third p-type embedded layers which are not in contact with one another are arranged in the n-type drift layer; the Schottky barrier metal layer is internally provided with a first lower convex part connected to the first p-type embedded layer, and the Schottky barrier metal layer is internally provided with a plurality of second lower convex parts connected to the second p-type embedded layers respectively. According to the invention, a plurality of p-type embedded layers are arranged in the n-type drift layer, the forward voltage drop is reduced, and the Schottky barrier metal layer is provided with a structure which is partially arched upwards, so that the forward conduction current can be improved.

Description

technical field [0001] The invention relates to a Schottky rectifier, and specifically discloses a Schottky rectifier with low pressure drop. Background technique [0002] Schottky rectifiers, also known as Schottky diodes, are made by contacting metal and semiconductor to form a metal-semiconductor junction. It has excellent performance of low power consumption and ultra-high speed. [0003] When a forward voltage is applied to the Schottky rectifier, the Schottky barrier between the metal and the semiconductor can form a conduction effect, but there is still a non-negligible internal electric field at the Schottky barrier, forming a large The forward voltage drop affects the forward conduction current of the Schottky rectifier, and the performance of the Schottky rectifier is not good. Contents of the invention [0004] Based on this, it is necessary to address the problems in the prior art to provide a low-drop Schottky rectifier with low forward voltage and large forw...

AI Technical Summary

Problems solved by technology

[0003] When a forward voltage is applied to the Schottky rectifier, the Schottky barrier between the metal and the semiconductor can form a conduction effect, but there is still a non-negligible internal electric field at the Schottky barrier, forming a large The forward voltage drop affects the forward conduction current of the Schottky rectifier, and the performance of the Schottky rectifier is not good

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