Preparation method of light-emitting diode epitaxial wafer

Abstract

The invention provides a preparation method of a light-emitting diode epitaxial wafer, and belongs to the field of light-emitting diode manufacturing. A composite layer is inserted between the n-type GaN layer and the multi-quantum well layer, and the composite layer comprises an AgGaN sub-layer and an AlGaN sub-layer which are sequentially stacked on the n-type GaN layer. The AgGa metal compound in the AgGaN sub-layer can effectively capture the electrons, so that the number of the electrons entering the AgGaN sub-layer from the AgGaN sub-layer is reduced. The AlGaN sub-layer with a high potential barrier can further block electrons, the the capturing of the electrons by the AlGaN sublayer and the potential barrier of the AlGaN sub-layer can play a dual blocking role, the density of the electrons entering the multi-quantum well layer is greatly reduced, the possibility of electron overflow is low, the time for holes to enter the multi-quantum well layer is longer, the number of holes entering the multi-quantum well layer is greatly increased, and the luminous efficiency of the light-emitting diode is effectively improved.

Description

technical field [0001] The disclosure relates to the field of light-emitting diode fabrication, in particular to a method for preparing a light-emitting diode epitaxial wafer. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The light-emitting diode epitaxial wafer is the basic structure used to prepare light-emitting diodes. The light-emitting diode epitaxial wafer includes at least a substrate and an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer stacked on the substrate in sequence. The n-type GaN layer The donated electrons recombine with the holes donated by t...

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Problems solved by technology

However, the migration speed of electrons in the n-type GaN layer is much higher than that of holes in the p-type GaN layer, and it is prone to excessive electron migration, and the electrons directly migrate to the p-type GaN layer, and non-radiative recombination occurs with holes.

The number of holes entering the multi-quantum well layer is reduced, reducing the luminous efficiency of the light-emitting diode

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