Light-emitting diode epitaxial wafer and preparation method thereof
A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency and quantity reduction of light-emitting diodes, and achieve the effects of improving luminous efficiency, quality, and quality
Active Publication Date: 2022-05-13
HC SEMITEK SUZHOU
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[0003] Since the generation efficiency and mobility of electrons are much greater than that of holes, the number of electrons entering the multi-quantum well layer will be much larger than the number of holes entering the multi-quantum well layer, and the electrons will easily overflow the multi-quantum well layer and enter the multi-quantum well layer. In the p-type GaN layer, non-radiative recombination occurs with holes in the p-type GaN layer, and some holes are consumed by electrons before entering the multi-quantum well layer, resulting in a reduction in the number of holes entering the multi-quantum well layer. Light-emitting diodes have low luminous efficiency
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[0027] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0028] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those having ordinary skill in the art to which the present disclosure belongs. "First", "second", "third" and similar words used in the specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components . Likewise, words like "a" or "one" do not denote a limitation in quantity, but indicate that there is at least one. Words such as "comprises" or "comprising" and similar terms mean that the elements or items listed before "comprising" or "comprising" include the elements or items listed after "comprising" or "comprising" a...
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Abstract
The disclosure provides a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of light-emitting diodes. In the n-type GaN layer, a plurality of insertion layers are inserted at intervals. The plurality of first GaN sublayers in the plurality of insertion layers can consume electrons in multiple times, and counteract the effect that the electron generation rate is too fast relative to the hole generation rate. Increase the number of holes entering the MQW layer. The second GaN sublayer made of the intrinsic material stacked on the first GaN sublayer further plays a role in blocking electrons, increasing the time reserved for holes, and at the same time improving the quality of the n-type GaN layer. The number of holes entering the multi-quantum well layer of the finally obtained light-emitting diode epitaxial wafer increases, so the luminous efficiency of the light-emitting diode epitaxial wafer is improved, and the quality of the light-emitting diode epitaxial wafer is improved at the same time, which can further improve the final light-emitting diode. Luminous efficiency.
Description
technical field [0001] The present disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. Light-emitting diode epitaxial wafers usually include a substrate and an n-type GaN layer, a multi-quantum well layer, and a p-type GaN layer stacked in sequence on the substrate. The electrons generated by the n-type GaN layer and the holes generated by the p-type GaN layer are under the action of current Enter the multi-quantum well layer to recombine and emit light. [0003] Since the generation efficiency and mobility of electrons are much greater than that of holes, the number of...
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IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/0075H01L33/325
Inventor 从颖姚振梅劲
Owner HC SEMITEK SUZHOU