Method and device for optimizing photoetching process window and computer storage medium
A technology for computer storage and lithography, which is applied in photolithography process exposure devices, optomechanical equipment, microlithography exposure equipment, etc., and can solve problems such as the deterioration of lithography process parameters.
Pending Publication Date: 2021-05-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0004] In order to solve the problem of deterioration of lithography process parameters caused by the heating of the lens of the projection objective lens of the lithography machine, the present invention provides a method and device for optimizing the lithography process window, and a computer storage medium, which can better optimize the lithography process windows etc.
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[0046] The method, device, and computer storage medium for optimizing the photolithography process window provided by the present invention will be explained and illustrated in detail below in conjunction with the accompanying drawings.
[0047] Such as figure 1 As shown, one or more embodiments of the present invention provide a method for optimizing a photolithography process window, which may include but not limited to at least one of the following steps.
[0048] Provide initial light source and initial mask, and choose the best photolithography conditions. Wherein the initial light source can include but not limited to ring light source, FreeForm light source (free form light source) and DOE (Diffractive Optical Elements, diffractive optical element) light source; Wherein the initial mask can include test mask and chip manufacturing mask, on the test mask The core size structure is drawn and is mainly used for the co-optimization of the light source mask for the core siz...
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The invention can provide a method and device for optimizing the photoetching process window, and a computer storage medium. The method for optimizing the photoetching process window comprises the following steps: acquiring ideal light source information and ideal mask information under an ideal photoetching condition, and generating process window information under the ideal photoetching condition according to the ideal light source information and the ideal mask information; and obtaining an aberration coefficient combination for optimizing the current photoetching process window based on the process window information. A light source corresponding to the ideal light source information and a mask corresponding to the ideal mask information are used in the current photoetching process. According to the method, the aberration coefficient combination can be quickly determined, so that the photoetching imaging quality is improved by utilizing the aberration coefficient combination, and the manufacturing yield of a semiconductor device is further improved. According to the invention, the problem of photoetching process matching under a non-ideal photoetching machine system or a non-ideal process condition can be effectively solved, and a process window equivalent to that of an ideal photoetching machine and an ideal photoetching process can be achieved.
Description
technical field [0001] The present invention relates to the technical field of photolithography process window optimization, and more specifically, the present invention can provide a method and device for optimizing a photolithography process window, and a computer storage medium. Background technique [0002] The lithography process is the key process and core process in the processing of integrated circuits, and the quality of lithography directly affects the performance of devices and chips. In the lithography process, the lithography process window (Process Window) is an extremely important criterion for measuring the lithography level, and relevant R&D personnel are always committed to optimizing the lithography process window to obtain a larger lithography process window. Among them, the performance of the lithography machine during operation has a direct impact on the lithography process window, especially the working state of the lithography machine during exposure....
Claims
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CPCG03F7/705G03F7/70508
Inventor 张双韦亚一张利斌盖天洋何建芳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI