Oxide thin film transistor type resistance meter

A technology for oxide thin film and resistance measurement, which is applied in the direction of transistors, measuring devices, measuring electrical variables, etc., can solve problems such as inability to measure continuous resistance, and achieve the effect of improving the accuracy of resistance

Pending Publication Date: 2021-05-25
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the traditional equivalent substitution method to measure resistance, since the resistance box is not a continuous resistance value, the change of continuous resistance value cannot be measured

Method used

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  • Oxide thin film transistor type resistance meter
  • Oxide thin film transistor type resistance meter
  • Oxide thin film transistor type resistance meter

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preparation example Construction

[0023] A method for preparing an oxide thin film transistor type resistance meter of the present invention comprises the following steps:

[0024] 1. Clean a piece of ITO conductive transparent glass coated with ITO coating;

[0025] 2. Prepare a layer of PVA solid electrolyte film as a gate dielectric on the ITO transparent glass coated with the ITO coating side;

[0026] 3. Prepare the source electrode, drain electrode and channel on the PVA gate dielectric by magnetron sputtering method;

[0027] 4. Use the welding method to connect the electrode pen with the source electrode and the drain electrode respectively.

Embodiment 1

[0029] 1. Preparation

[0030] 1. Use deionized water to clean the beaker;

[0031] 2. Use alcohol to clean the ITO glass sheet by ultrasonic wave, the cleaning time is 10 minutes, and the cleaning is repeated three times;

[0032] 3. Take out the cleaned ITO glass sheet, rinse it with the aforementioned deionized water, and perform ultrasonic cleaning. The cleaning time is 10 minutes, and the cleaning is repeated three times;

[0033] 4. Take out the cleaned glass piece and use a nitrogen gun to remove excess water stains on the glass surface;

[0034] 5. Finally, use the electric meter to test to judge the side of the glass with ITO coating, and mark it;

[0035] 6. Clean the silicon wafer with acetone, the cleaning time is 10 minutes, and perform three cleanings, then rinse with deionized water, and use ultrasonic cleaning, the cleaning time is 10 minutes, and perform three cleanings in total;

[0036] 7. Also use a nitrogen gun to dry the surface of the silicon wafer. ...

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Abstract

The invention relates to the technical field of resistance meters, in particular to an oxide thin film transistor type resistance meter. The PVA solid electrolyte film is used as the gate medium, the surface morphology of the PVA gate medium is observed by using an atomic force microscope, the surface is smooth and continuous and has no tiny cracks, and good device performance can be obtained. Before and after the measured resistor is connected in series in the circuit, the current in the circuit is kept unchanged by adjusting the gate voltage, and the absolute value of the difference between the front and rear resistance values of the channel is the resistance value of the measured resistor. Compared with a traditional volt method for measuring the resistance, the method has the advantages that the gate voltage can be continuously changed, so that the resistance of the channel can be continuously changed, and the accuracy of the measured resistance value can be improved when the oxide thin film transistor type resistance measuring meter is used for measuring large resistance.

Description

technical field [0001] The invention relates to the technical field of resistance measuring meters, in particular to an oxide thin film transistor type resistance measuring meter. Background technique [0002] The resistance meter is a kind of electronic device. Using the good ohmic characteristics of the output characteristic curve of the oxide thin film transistor at a lower voltage, the measured resistance and the resistance meter are connected in series to form a closed circuit, and the resistance is measured by the volt-volt method. . In the traditional equivalent substitution method to measure resistance, since the resistance box is not a continuous resistance value, the change of continuous resistance value cannot be measured. In recent years, the research on oxide thin film transistors has been deepened, and the application of this electronic device has also been continuously expanded, which has gradually attracted widespread attention. In oxide thin film transisto...

Claims

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Application Information

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IPC IPC(8): G01R27/14H01L29/786
CPCG01R27/14H01L29/7869
Inventor 郭立强董钱王伟琳丁建宁程广贵
Owner JIANGSU UNIV
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