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Scribing channel method suitable for IGBT semiconductor device

A scribing lane and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high production cost, slow processing speed, and large space occupation, so as to save occupied space, speed up production, The effect of narrowing the width

Active Publication Date: 2021-05-25
JIANGSU HAIDONG SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This kind of process has high production cost, slow processing speed and large space occupation.

Method used

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  • Scribing channel method suitable for IGBT semiconductor device
  • Scribing channel method suitable for IGBT semiconductor device
  • Scribing channel method suitable for IGBT semiconductor device

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Embodiment Construction

[0042] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0043] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments of some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0044] It should be noted that the terms "first" and "second...

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Abstract

The invention discloses a scribing channel method suitable for an IGBT semiconductor device. The method comprises the following step: (1) preparing a wafer of which the surface is subjected to primary scribing channel; (2) forming silicon nitride on the surface of the wafer; (3) bonding the wafer and the glass substrate together; (4) coating a photoetching colloid on the wafer; (5) removing the part, located in the scribing channel area, of the photoetching colloid; (6) removing the part, located in the scribing channel area, of the wafer; (7) removing the photoetching colloid; and (8) separating the wafer from the glass substrate, and then finishing the scribing channel chip semi-finished product of the semiconductor device. The structure is simple, the scribing cost is reduced, the production speed is increased, the width of a scribing channel is reduced, and the space occupied by the scribing channel is saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor production, and more specifically relates to a scribing lane method suitable for IGBT semiconductor devices. Background technique [0002] In the process of chip processing, for the subsequent dicing operation, the structure of the dicing lane will be added in the production process of the wafer (such as figure 1 shown). [0003] The function of the dicing lane is to cut each chip by dicing before the subsequent coring, and finally realize the core packaging. [0004] Such as figure 2 Shown is the specific structure of the scribing lane, with a width of X1 and a depth of Y1. The current scribe lane width is X1>=45um; depth<=20um. [0005] The subsequent process is thinning, such as image 3 As shown, the thickness of the wafer after thinning is Y2 [0006] The final process is drawing, such as Figure 4 As shown in the figure, the chips are cut with a diamond knife at the dicing l...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L21/683
CPCH01L21/6836H01L21/78
Inventor 夏华忠黄传伟李健诸建周吕文生谈益民
Owner JIANGSU HAIDONG SEMICON TECH CO LTD