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Super junction device

A super-junction device and gate structure technology, which is applied in the field of semiconductor integrated circuit device structure, can solve the problems such as the difficulty of super-junction MOSFET replacing VDMOS, and achieve the effect of not reducing the breakdown voltage, increasing the application range, and increasing the gate-drain capacitance

Pending Publication Date: 2021-05-28
NANTONG SANRISE INTEGRATED CIRCUIT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes it difficult for super-junction MOSFETs to replace VDMOS

Method used

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Embodiment 1

[0062] Embodiment 1 of the present invention super junction device:

[0063] Such as figure 2 Shown is the cross-sectional structure diagram of the first cell of the superjunction device in the first embodiment of the present invention; as image 3 As shown, it is a top view structure diagram of the super junction device of the first embodiment of the present invention; the middle region of the super junction device of the embodiment of the present invention is the charge flow region 101, and the terminal region 102 surrounds the outer periphery of the charge flow region 101, and the transition region is located between the charge flow region 101 and the termination region 102 .

[0064] The charge flow region 101 includes a superjunction structure composed of a plurality of alternately arranged columns 11 of the first conductivity type and columns 3 of the second conductivity type; each column 11 of the first conductivity type and its adjacent columns of the second conducti...

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Abstract

The invention discloses a super junction device. In a charge flow region, the super junction device at least comprises a first primitive cell, and the first primitive cell comprises a first channel region which is located in a top region of a first conductive type column and is spaced from a second conductive type column. A first gate structure covers the first channel region, a source region is formed on the surface of the first channel region, the top of the source region is connected to a source electrode composed of a front metal layer through a contact hole penetrating through an interlayer film, and the top of the second conductive type column is not connected with an electrode and is of a floating structure when the super junction device works dynamically. According to the invention, the gate-drain capacitance of the device can be increased, the electromagnetic interference of the device in an application circuit can be effectively reduced, and the overshoot of current and voltage brought by the device in the application circuit can be effectively reduced.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device structure, in particular to a superjunction device. Background technique [0002] Super-junction devices such as super-junction MOSFETs are based on the existing VDMOS, by inserting lateral P-type pillars in the vertical drift region, so that the doping concentration of the drift region can be greatly increased without reducing the breakdown voltage. More importantly, it is different from the existing VDMOS, and its specific on-resistance can be continuously reduced by continuously reducing the distance between the P-type columns. [0003] Therefore, compared with the existing VDMOS, under the same on-resistance, the chip area of ​​the super-junction MOSFET can reach less than one-sixth of the VDMOS, and its capacitance is also drastically reduced. [0004] This also brings a certain degree of difficulty to replace VDMOS with super-junction MOSFET. [0005] This is because: [0006] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7813H01L29/0634
Inventor 曾大杰
Owner NANTONG SANRISE INTEGRATED CIRCUIT CO LTD
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