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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their fabrication, can solve the problem of reducing the time for storing electric charges in a capacitor unit, and achieve the effect of reducing leakage current

Pending Publication Date: 2021-06-01
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the reduction of device size, the capacitance value of the storage capacitor unit of the DRAM is continuously reduced, and various leakage phenomena appear, which in turn leads to a decrease in the time for the capacitor unit to store charge

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0050] Example embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these examples are provided so that this disclosure will be thorough and complete and will fully convey the concept of the exemplary embodiments communicated to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0051] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the modules of the icon ar...

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PUM

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Abstract

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a buried gate structure, doped regions and a filling layer, wherein the buried gate structure is arranged on the substrate, the buried gate structure is located in a groove above the substrate, the buried gate structure comprises a gate dielectric layer, a first barrier layer and a metal layer which are sequentially arranged in the groove from outside to inside, and the top of the metal layer is provided with a sunken structure with a sunken upper surface; the doped regions are arranged on the substrate parts on the two sides of the buried gate structure; and the filling layer covers the metal layer. According to the technical scheme, the leakage current of the drain electrode induced by the gate electrode can be reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] As the size of the device decreases, the capacitance value of the storage capacitor unit of the DRAM decreases continuously, and various leakage phenomena occur, which further reduces the time for the capacitor unit to store charges. Due to the overlapping area between the gate word line and the source / drain, when the word line of the gate is connected to zero voltage or even negative voltage, and the drain is connected to the high voltage of the capacitor unit to store the charge, there will be a gate-induced drain Leakage current (GIDL, Gate-Induced Drain Leakage), which is an important factor leading to leakage of stored charge in the capacitor unit. [0003] Under the condition of balancing other performances of the storage transistor, how to reduce the GIDL is an urgent t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L21/28
CPCH01L29/4236H01L21/28008
Inventor 李新应战
Owner CHANGXIN MEMORY TECH INC