Check patentability & draft patents in minutes with Patsnap Eureka AI!

Manufacturing method of flash memory

A technology of flash memory and manufacturing method, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as control gate short circuit, and achieve the effect of solving control gate short circuit

Pending Publication Date: 2021-06-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method of manufacturing flash memory to solve the problem of short circuit of the control gate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of flash memory
  • Manufacturing method of flash memory
  • Manufacturing method of flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] The manufacturing method of the flash memory proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0050] refer to figure 2 , which is a schematic flowchart of a method for manufacturing a flash memory provided by an embodiment of the present invention. Such as figure 2 As shown, the manufacturing method of the flash memory includes:

[0051] Step S1: providing a semiconductor substrate, on which a control gate material layer and a mask layer are sequentially formed;

[0052] Step S2: forming a first opening in the mask layer, the first opening exposing...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a manufacturing method of a flash memory. An opening size of a second opening in a side wall material layer can be increased by reducing the thickness of the side wall material layer so that a process window for subsequently etching the side wall material layer can be increased, and after the side wall material layer is etched to form the side wall layer, a part of a control gate material layer can be exposed so that the side wall layer is prevented from blocking the subsequently etched control gate material layer; and the control gate material layer can be broken when the control gate material layer is subsequently etched, and the broken control gate material layer is utilized to form the control gate layer. Therefore, the problem of a short circuit of the control gate in the flash memory caused by a fact that the side wall layer blocks the etching of the control gate material layer can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a flash memory. Background technique [0002] In the current semiconductor industry, memory accounts for a considerable proportion of integrated circuit products, and the development of flash memory in memory is particularly rapid. Its main feature is that it can keep the stored information for a long time without power on. It has many advantages such as high integration, fast access speed and easy erasure, so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] refer to figure 1 , which is a schematic cross-sectional view of the structure of the flash memory in the prior art. The manufacturing process of the flash memory is specifically as follows: first, a semiconductor substrate 1 is provided, and a floating gate material layer 2 and a control gate material la...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L27/11521H01L29/788
CPCH01L29/66825H01L29/788H10B41/30
Inventor 付博曹启鹏王卉曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com