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Semiconductor structure

A technology of semiconductor and capacitor structure, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problem of increasing the chip area, and achieve the effect of improving the utilization rate, stable power supply voltage, and improving the quality of film formation

Active Publication Date: 2021-06-04
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] Based on this, it is necessary to provide a semiconductor chip for the problem of increasing the chip area caused by the filter capacitor in the prior art

Method used

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

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Embodiment Construction

[0038] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0040] It will be understood that when an element or layer is referred to as being "on," "adjac...

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Abstract

The present invention relates to a semiconductor structure, and relates to a semiconductor structure, comprising: a pad structure over a substrate; and a capacitor structure which s positioned between the substrate and the bonding pad structure, is arranged opposite to the bonding pad structure, and comprises at least two capacitor units which are connected in parallel and are arranged at intervals, wherein each capacitor unit comprises at least one capacitor device. The semiconductor structure can effectively improve the utilization rate of the area where the bonding pad structure is located. Compared with a traditional arrangement mode that a capacitor structure is additionally arranged in an unoccupied place in the chip, the chip area can be effectively prevented from being increased due to the arrangement of the capacitor structure. Meanwhile, the size of each capacitor unit under the large-size bonding pad structure is relatively small. In the manufacturing process, each related film layer of the capacitor unit with a smaller size is easier to uniformly form a film. Therefore, the film forming quality of each related film layer can be improved, so that the reliability of the capacitor structure is higher, and the power supply voltage of a related power supply is more stable.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor structure. Background technique [0002] The capacitor has energy storage performance, and it is connected in parallel between the power terminal and the ground terminal, which can make the voltage fluctuation generated by the power terminal during the operation of the circuit smooth, and make the working performance of the power terminal more stable. Therefore, in circuit design, it is often necessary to add a large number of capacitor structures to enhance the stability of the power supply terminal. Not only the power supply side, when the signal side needs to remove high-frequency noise, it can also be achieved by adding a capacitor to the signal side. [0003] In existing semiconductor chips, capacitor structures are usually added to spare places in the chip to stabilize the power supply terminal or signal terminal in the chip. However, in t...

Claims

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Application Information

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IPC IPC(8): H01L27/08
CPCH01L27/0805
Inventor 王林
Owner CHANGXIN MEMORY TECH INC
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