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Wrap-around gate assembly and manufacturing method thereof

A wrap-around, gate technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of losing the advantages of compound semiconductors and not being able to obtain high current gain characteristics

Pending Publication Date: 2021-06-04
吴俊鹏 +1
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Problems solved by technology

[0002] Compound semiconductor devices (such as gallium nitride) are already one of the trends of future radio frequency (RF) and high power (highpower) devices. In the design of components, the industry always fabricates gates on top of the two-dimensional electron gas stacked with heterogeneous materials. In this method, only one side is the Schottky contact, not only cannot obtain high current gain characteristics, but also only a single-directional electric field can deplete the electrons in the gate channel when the device is turned off, directly The loss of the advantages of compound semiconductors is the bottleneck encountered by compound semiconductor components

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  • Wrap-around gate assembly and manufacturing method thereof
  • Wrap-around gate assembly and manufacturing method thereof
  • Wrap-around gate assembly and manufacturing method thereof

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[0012] In order to make the purpose, technical features and advantages of the present invention more understandable to those in the relevant technical field, and to implement the present invention, the technical features and implementation modes of the present invention are specifically explained in conjunction with the attached drawings, and listed The preferred embodiment is further described. The diagrams compared below are intended to express the schematic representations related to the features of the present invention, and do not need to be completely drawn according to the actual situation. The description about the implementation of this case involves technical content well known to those skilled in the art, and will not be stated again.

[0013] In the present invention, the x-axis, y-axis and z-axis adopt a right-handed Cartesian coordinate system, that is, a three-axis orthogonal (x, y, z) coordinate system. The detailed directions of the x-axis, y-axis, z-axis and...

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Abstract

A surrounding type grid electrode assembly is characterized in that the surrounding type grid electrode assembly comprises a substrate; a grid electrode which is of a surrounding structure and is arranged above the substrate, wherein the outermost layer of the grid electrode is a surrounding type grid electrode metal layer, a surrounding type grid electrode dielectric layer is arranged in the surrounding type grid electrode metal layer, and a compound semiconductor is wrapped in the surrounding type grid electrode dielectric layer; dielectric layers which are arranged on the two sides of the gate metal layer, wherein the surrounding gate metal layer extends and covers the upper part of the dielectric layer.

Description

technical field [0001] The present invention relates to providing a compound semiconductor device, in particular to providing a gate component with a surrounding structure and a manufacturing method thereof. Background technique [0002] Compound semiconductor devices (such as gallium nitride) are already one of the trends of future radio frequency (RF) and high power (highpower) devices. In the design of components, the industry always fabricates gates on top of the two-dimensional electron gas stacked with heterogeneous materials. In this method, only one side is the Schottky contact, not only cannot obtain high current gain characteristics, but also only a single-directional electric field can deplete the electrons in the gate channel when the device is turned off, directly The loss of the advantages of compound semiconductors is the bottleneck encountered by compound semiconductor components at present. Contents of the invention [0003] In order to improve the lack m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66795H01L29/785
Inventor 何伟志吴俊鹏
Owner 吴俊鹏
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