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Optical semiconductor device and method for manufacturing optical semiconductor device

A technology for an optical semiconductor device and a manufacturing method, which can be applied to semiconductor lasers, lasers, laser parts, etc., and can solve the problems of narrowness, unpredictable yield, and increased manufacturing costs.

Pending Publication Date: 2021-06-04
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the structure described in Patent Document 1, because of the narrowness of the buried layer, multiple mesa formation and buried growth are required, and there is a problem that the manufacturing cost becomes high.
In addition, there is a problem that a stable yield cannot be expected due to the difficulty of pattern alignment at the time of forming a plurality of mesas, or pattern formation itself.

Method used

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  • Optical semiconductor device and method for manufacturing optical semiconductor device
  • Optical semiconductor device and method for manufacturing optical semiconductor device
  • Optical semiconductor device and method for manufacturing optical semiconductor device

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Embodiment approach 2

[0029] image 3 It is a sectional view showing the structure of the optical semiconductor device according to Embodiment 2. The manufacturing method is almost the same as that of Embodiment 1. However, compared to Embodiment 1, buried layer 50 is composed of Fe-doped InP buried layer only, and has a structure without n-type InP buried layer 52 in Embodiment 1.

[0030] even if image 3 In the structure shown, since the Fe-doped InP buried layer is narrowed, the interdiffusion region of Zn and Fe can be narrowed only to a narrow region on the inclined plane, so the hole current can be further suppressed from p-type InP first A leakage of the cladding layer 30 to the Fe-doped InP buried layer 51 . Therefore, similarly to Embodiment 1, there is an effect of improving the luminous efficiency of a semiconductor laser as an optical semiconductor device.

Embodiment approach 3

[0032] Figure 4 It is a sectional view showing the structure of the optical semiconductor device according to Embodiment 3. The manufacturing method is almost the same as Embodiment 1, but the difference from Embodiment 1 is that an additional p-type InP first cladding layer 32 is provided between the upper optical confinement layer 22 and the p-type InP first cladding layer 30 And an AlGaInAs optical confinement layer (additional optical confinement layer) 23 is added, and the additional optical confinement layer 23 becomes the starting point of the inclined surface 33 . At this time, the additional optical confinement layer 23 provided to serve as the starting point of the inclined surface 33 is not limited to AlGaInAs, as with the upper optical confinement layer 22 in Embodiment 1, as long as it contains Ga or Al, such as AlInAs or GaInAs. layer.

[0033] In Embodiment 1, when the n-type InP buried layer 52 is in contact with the active layer 20 due to variation in the s...

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Abstract

This optical semiconductor device is provided with: a mesa (200) that has a first conductivity-type clad layer (11), an active layer (20), and a second conductivity-type first clad layer (30) of a second conductivity type, sequentially laminated on the surface of a first conductivity-type substrate (10); a embedding layer (50) which causes the top part of the mesa (200) to be exposed but embeds both sides of the mesa (200); and a second conductivity-type second clad layer (31) which embeds the embedding layer (50) and the top part of the mesa (200) exposed from the embedding layer (50), wherein the embedding layer (50) includes a layer doped with a semi-insulating material, and a boundary (33) between the second conductivity-type first clad layer (30) and the embedding layer (50) is inclined so that the second conductivity-type first clad layer (30) becomes narrower toward the top part of the mesa (200).

Description

technical field [0001] The present application relates to an optical semiconductor device and a method of manufacturing the same. Background technique [0002] In an optical semiconductor device typified by a semiconductor laser, a structure in which a side surface of the active layer is buried with a semiconductor (so-called embedded laser) is often used in order to narrow the current to the active layer and to dissipate heat from the active layer. In an InP-based embedded laser used for optical communication, a combination of an n-type InP substrate and an InP embedded layer doped with a semi-insulating material such as Fe is used in order to reduce capacitance for high speed. Fe functions as an electron trap in InP and does not have a trap effect on holes. Therefore, a structure in which an n-type InP layer is arranged on a portion of the buried layer in contact with the p-side cladding layer is generally used. Regarding the above structure, in order to further improve t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/227
CPCH01S5/32308H01S5/2275H01S5/2201H01S5/2224H01S5/2086H01S5/227H01S5/221H01S5/2231
Inventor 河原弘幸中井荣治
Owner MITSUBISHI ELECTRIC CORP