Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel preparation method of electronic-grade CHF3

An electronic-grade and new technology, applied in the field of new preparation of electronic-grade CHF3, can solve the problems of not taking into account the boiling point parameters of trifluoromethane, reducing the effect of trifluoromethane, etc., so as to enhance the thermal convection effect, enhance the structural strength, and ensure isolation. sexual effect

Inactive Publication Date: 2021-06-08
FUJIAN DEER TECH CORP
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It not only considers the removal of conventional impurities, but also removes difficult-to-remove carbon dioxide, difluorochloromethane, pentafluoroethane, water, and particle size to a qualified range. The product purity is 99.999%, which meets the requirements of the semiconductor industry; but This technical scheme does not take into account the similar boiling point parameters between the impurities in the purification process of trifluoromethane, which reduces the effect of purifying trifluoromethane

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel preparation method of electronic-grade CHF3
  • Novel preparation method of electronic-grade CHF3
  • Novel preparation method of electronic-grade CHF3

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] Such as Figure 1 to Figure 4 Shown, a kind of electronic grade CHF of the present invention Novel preparation method, this method step is as follows:

[0032] S1, preheating and activation; feed nitrogen into the reaction pipeline 2 for circular purging, and raise the temperature of the reaction pipeline 2 to 180-210°C for more than 30 minutes, and then pass into the circularly purged reaction pipeline 2 Hydrogen fluoride gas is used for fluorination, and the amount of supplemented hydrogen fluoride gas is controlled to account for 30-45% of the internal volume of the reaction pipeline 2. The filling of hydrogen fluoride gas is completed within 7-11 minutes, and the temperature of the reaction pipeline 2 is kept at 175-205°C Maintain for 20 minutes to complete the activation of the reaction pipeline 2;

[0033] S2. Catalytic synthesis: feed difluorochloromethane gas into the reaction pipeline 2 of S1 to make it account for 25-35% of the volume of the reaction pipeline...

Embodiment approach

[0039] As an embodiment of the present invention, the center of the sealing diaphragm 3 is provided with an expansion hole 32, and the sealing diaphragm 3 is in sliding contact with the fractionating tube 4 through the expansion hole 32; an annular expansion bag 33 is also installed in the expansion hole 32 , the inside of the expansion bag 33 is divided into two independent upper and lower layers, and the expansion bag 33 is also provided with a port 331 on both sides of the sealing partition; when in use, the ring plate 31 on the inner wall of the tower kettle 1 is used to adjust the sealing diaphragm 3 In order to change the pressure of the cavity where the fractionation conduit 5 is located, the sealing diaphragm 3 will be deformed under the different pressure state on both sides; through the expansion hole 32 arranged in the center of the sealing diaphragm 3, cooperate with the installed expansion hole 32 The bladder 33, when the sealing diaphragm 3 is deformed due to pres...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of preparation of CHF3, in particular to a novel preparation method of electronic-grade CHF3. The method comprises the steps of preheating activation, catalytic synthesis, nitrogen temperature control and graded rectification. The used rectifying tower comprises a tower kettle, a reaction pipeline, a sealing diaphragm and a controller; as the boiling points of all compounds and simple substances in the prepared trifluoromethane are close to those of the trifluoromethane, the concentration of the rectified and purified trifluoromethane is difficult to meet the electronic-grade purity requirement required by the semiconductor industry; therefore, the reaction pipeline arranged in the rectifying tower is matched with the fractionation guide pipe communicated with the interior of the tower kettle, so that a trifluoromethane primary product prepared after the reaction pipeline is preheated and activated is directly and sequentially conveyed into the fractionation guide pipes in different temperature and pressure states through the fractionation pipe; an adjustable independent cavity is formed in the tower kettle by utilizing the sealing diaphragm and is adaptive to rectification conditions required by purification of trifluoromethane in different purity states, so that the operation effect of the novel preparation method of the electronic-grade CHF3 is improved.

Description

technical field [0001] The invention relates to the technical field of CHF3 preparation, in particular to a novel preparation method of electronic grade CHF3. Background technique [0002] Trifluoromethane CHF3 is a colorless, slightly smelly, non-conductive gas. Electronic-grade trifluoromethane is one of the plasma etching gases widely used in the microelectronics industry, especially for etching silicon dioxide films. With the advantages of fast etching speed and good selectivity, with the development of the semiconductor industry, the demand for electronic grade CHF3 is gradually increasing. Generally, the purity of electronic grade trifluoromethane is 99.9999%, which involves the deep removal technology of various impurities . [0003] Trifluoromethane currently prepared contains a variety of trace elements such as fluoride and elemental substances, and batch distillation is often used to remove each impurity in succession, and the boiling point of each compound and el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07C17/20C07C17/383C07C19/08
CPCC07C17/206C07C17/383C07C19/08
Inventor 张奎李纪明杨青朱军伟黄雨迪阙祥育
Owner FUJIAN DEER TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com