Reverse analysis method for anomalies of patterned substrate LED epitaxial wafer

Abstract

The embodiment of the invention discloses a reverse analysis method for anomalies of a patterned substrate LED epitaxial wafer. The LED epitaxial wafer comprises a patterned substrate and an epitaxial layer which are arranged in a laminated manner. The reverse analysis method for anomalies of the patterned substrate LED epitaxial wafer comprises the following steps of carrying out macroscopic defect detection and / or microstructure detection on the surface of the epitaxial layer; etching and stripping the epitaxial layer layer by layer to form a plurality of etching surfaces until the epitaxial layer is completely cleaned and removed; and carrying out macroscopic defect detection and / or microstructure detection on each etching surface, determining the abnormal condition of the etching surface, and analyzing the relevance between the abnormal condition of the etching surface and the patterned substrate. According to the embodiment of the invention, the epitaxial layer is analyzed through layer-by-layer etching, so that the visual relation between the patterned substrate and the abnormity of the epitaxial layer can be established, the process technology can be improved and optimized, abnormal products are reduced, and the product quality is improved.

Description

technical field [0001] Embodiments of the present invention relate to optoelectronic technology, and in particular to a reverse analysis method for abnormalities of patterned substrate LED epitaxial wafers. Background technique [0002] Patterned sapphire substrate is currently the most important substrate material for epitaxial growth of GaN LEDs. The microstructure and optical parameters of its surface pattern have a great influence on the quality of epitaxial wafers, such as the same periodic arrangement of different bottom widths. There is a big difference in the luminance of the patterned sapphire substrate after the same epitaxial process. The existing epitaxial wafer anomaly analysis methods mainly focus on the crystal quality of the epitaxial layer, but there are very few analysis methods that directly connect the pattern substrate with the epitaxial layer on it, resulting in some problems in engineering research or mass production. Epitaxy anomalies caused by patte...

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Problems solved by technology

The existing epitaxial wafer anomaly analysis methods mainly focus on the crystal quality of the epitaxial layer, but there are very few analysis methods that directly connect the pattern substrate with the epitaxial layer on it, resulting in some problems in engineering research or mass production. Epitaxy anomalies caused by patterned substrates are difficult to determine the cause

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