Physical vapor deposition equipment capable of flexibly adjusting sputtering range

Abstract

The invention provides physical vapor deposition equipment capable of flexibly adjusting the sputtering range. The physical vapor deposition equipment comprises a cavity, a sputtering device, a base, a baffle, a driving device, a driving gear, a transmission gear and multiple movable shielding units. The baffle comprises a first part and a second part, the first part is distributed in the circumferential direction of the cavity, one end of the second part is connected with the bottom of the first part, and the other end of the second part extends towards the center of the cavity. The driving gear is engaged with the transmission gear. The multiple movable shielding units are located on the inner side of the transmission gear, each movable shielding unit comprises an engagement part and a shielding part which are connected with each other, the engagement parts are engaged with the transmission gear, and the adjacent shielding parts are partially overlapped so that a sputtering channel can be formed on the inner sides of the shielding parts. The driving device is connected with the driving gear. When the driving gear is driven by the driving device to rotate, the transmission gear rotates under the engagement effect and drives the movable shielding units to rotate, and therefore the size of the sputtering channel is changed. The physical vapor deposition equipment is beneficial to improving coating uniformity.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a device for manufacturing integrated circuits, in particular to a physical vapor deposition device capable of flexibly adjusting the sputtering range. Background technique [0002] The coating process is an important process in the fabrication of semiconductor devices. Coating uniformity is crucial to product quality. It is not only one of the important indicators of film parameters, but also the core indicator of physical vapor deposition (PVD) equipment. The uniformity of the coating thickness has a great relationship with the target base distance (the distance between the sputtering target and the wafer base), the type of the magnet assembly above the target, and the gas flow rate. During the coating process, the wafer is placed on the base, the non-coated side is in contact with the base, and the coated side faces up to the target. For some power devices, packaging devic...

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Problems solved by technology

[0008] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a physical vapor deposition equipment that can flexibly adjust the sputtering range to solve the problem that the existing design of the shadow ring structure will cause sticking and wafer fragmentation, or cause The equipment is bulky, which increases equipment cost and operating power consumption.

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