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SOI wafer quality detection method and system

A quality inspection method and inspection system technology, applied in the field of SOI wafer quality inspection methods and systems, can solve problems such as inability to non-destructively inspect the quality of SOI wafers, and achieve the effect of non-destructive evaluation

Active Publication Date: 2021-06-18
MICROTERA SEMICON (GUANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method and system for detecting the quality of SOI wafers, which is used to solve the problem that the prior art cannot efficiently perform non-destructive inspection on the quality of SOI wafers and reveal its The problem of electrical characteristics

Method used

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  • SOI wafer quality detection method and system
  • SOI wafer quality detection method and system
  • SOI wafer quality detection method and system

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Embodiment 1

[0037] see Figure 1 to Figure 5 , the present embodiment provides a kind of SOI wafer quality detection method, it is characterized in that, comprises the following steps:

[0038] 1) An SOI wafer is provided, and the SOI wafer includes a substrate layer 101, a buried oxide layer 102, and a semiconductor layer 103 stacked in sequence; the semiconductor layer 103 includes a first doped layer 103a and a second doped layer 103a stacked in sequence. miscellaneous layer 103b;

[0039] 2) placing a first pressure probe 104 and a second pressure probe 105 with a separation distance on the surface of the semiconductor layer 103;

[0040] 3) Ground the first pressure probe 104, apply a constant first voltage to the second pressure probe 105, apply a variable second voltage to the substrate layer 101, and collect the second pressure probe First current data corresponding to different second voltages at 105;

[0041] 4) extracting the test surface mobility according to the different ...

Embodiment 2

[0074] like Image 6 As shown, the present embodiment provides a kind of SOI wafer quality detection system, it is characterized in that, comprises:

[0075]A current and voltage test module 107, which is used to perform a current and voltage test on the SOI wafer; the SOI wafer includes a substrate layer 101, a buried oxide layer 102 and a semiconductor layer 103 stacked in sequence; the semiconductor layer 103 includes sequentially The stacked first doped layer 103a and the second doped layer 103b; the first pressure probe 104 and the second pressure probe 105 with a separation distance are placed on the surface of the semiconductor layer 103; the first pressure probe The needle 104 is grounded, the current and voltage testing module 107 applies a constant first voltage to the second pressure probe 105, and applies a variable second voltage to the substrate layer 101;

[0076] A data collection and judging module 108, which collects the first current data corresponding to d...

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Abstract

The invention provides an SOI wafer quality detection method and system, and the method comprises the following steps: providing an SOI wafer which comprises a substrate layer, a buried oxide layer and a semiconductor layer; placing a first pressure probe and a second pressure probe; grounding the first pressure probe, applying a constant first voltage to the second pressure probe, and applying a variable second voltage to the substrate layer; and extracting a test surface mobility according to different second voltages and the corresponding first current data, and comparing the test surface mobility with a theoretical surface mobility to evaluate the quality of the SOI wafer. Aiming at the rapid evaluation requirement of the SOI wafer quality, the electrical characteristics capable of representing the SOI wafer quality are disclosed by carrying out current and voltage test on the test structure, extracting the surface mobility and comparing the surface mobility with a theoretical value, the nondestructive evaluation of the SOI wafer quality is realized, and the method has important significance for the process development of the solar cell SOI wafer.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an SOI wafer quality detection method and system. Background technique [0002] With the depletion of fossil fuel resources such as oil, the use of environmentally friendly and renewable solar energy has become a trend to maintain sustainable social development. Solar cells made of silicon-on-insulator (SOI) wafers have unique advantages of low cost and good performance. In its manufacturing process, a PN junction for photoelectric conversion is formed in the top silicon of the SOI wafer through two-layer doping, thus forming a solar cell device. Since the above-mentioned process uses ion implantation and high-temperature annealing process during doping, when making solar cell devices, it is necessary to know the concentration of activated impurities and evaluate the quality of the SOI bonding interface to ensure that a high-quality PN junction is ob...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02S50/10H01L21/66
CPCH02S50/10H01L22/14H01L22/34Y02E10/50
Inventor 刘森戴彬关宇轩符韬梁国豪
Owner MICROTERA SEMICON (GUANGZHOU) CO LTD