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soi wafer quality inspection method and system

A quality inspection method and wafer technology, applied in photovoltaic system monitoring, semiconductor/solid-state device testing/measurement, sustainable manufacturing/processing, etc., can solve problems such as non-destructive inspection of SOI wafer quality, and achieve The effect of non-destructive evaluation

Active Publication Date: 2022-07-05
MICROTERA SEMICON (GUANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method and system for detecting the quality of SOI wafers, which is used to solve the problem that the prior art cannot efficiently perform non-destructive inspection on the quality of SOI wafers and reveal its The problem of electrical characteristics

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  • soi wafer quality inspection method and system

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Embodiment 1

[0037] see Figure 1 to Figure 5 , the present embodiment provides a SOI wafer quality detection method, which is characterized in that it includes the following steps:

[0038] 1) Provide an SOI wafer, the SOI wafer includes a substrate layer 101, a buried oxide layer 102 and a semiconductor layer 103 stacked in sequence; the semiconductor layer 103 includes a first doped layer 103a and a second doped layer 103 stacked in sequence Impurity layer 103b;

[0039] 2) placing a first pressure probe 104 and a second pressure probe 105 with an interval on the surface of the semiconductor layer 103;

[0040] 3) grounding the first pressure probe 104, applying a constant first voltage to the second pressure probe 105, applying a changing second voltage to the substrate layer 101, and collecting the second pressure probe 105 first current data corresponding to different second voltages;

[0041] 4) Extract the test surface mobility according to the different second voltages and the ...

Embodiment 2

[0074] like Image 6 As shown, this embodiment provides an SOI wafer quality inspection system, which is characterized in that it includes:

[0075]The current and voltage test module 107 is used to perform current and voltage tests on the SOI wafer; the SOI wafer includes a substrate layer 101, a buried oxide layer 102 and a semiconductor layer 103 stacked in sequence; the semiconductor layer 103 includes a sequence of The stacked first doped layer 103a and the second doped layer 103b; the first pressure probe 104 and the second pressure probe 105 are placed on the surface of the semiconductor layer 103 with an interval distance; the first pressure probe The needle 104 is grounded, the current and voltage test module 107 applies a constant first voltage to the second pressure probe 105, and applies a variable second voltage to the substrate layer 101;

[0076] The data collection and determination module 108 collects the first current data corresponding to different second v...

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Abstract

The invention provides a method and system for detecting the quality of SOI wafers. The detection method includes the following steps: providing an SOI wafer, the SOI wafer includes a substrate layer, a buried oxide layer and a semiconductor layer; placing a first pressure probe and a second pressure probe Probe; grounding the first pressure probe, applying a constant first voltage to the second pressure probe, and applying a changing second voltage to the substrate layer; extracting the test surface according to different second voltages and corresponding first current data mobility, and compared with the theoretical surface mobility to evaluate the quality of SOI wafers. Aiming at the need for rapid evaluation of SOI wafer quality, the present invention reveals the electrical characteristics that can characterize the quality of SOI wafers by performing current and voltage tests on the test structure, extracting the surface mobility, and comparing with theoretical values, thereby realizing the detection of SOI wafer quality. The non-destructive evaluation of the circle quality is of great significance for the process development of SOI wafers for solar cells.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a SOI wafer quality detection method and system. Background technique [0002] With the depletion of fossil fuel resources such as petroleum, the use of environmentally friendly and renewable solar energy has become a trend to maintain sustainable social development. Solar cells fabricated with silicon-on-insulator (SOI) wafers have the unique advantages of low cost and good performance. In its manufacturing process, a PN junction for photoelectric conversion is formed in the top silicon of the SOI wafer through two layers of doping, thereby forming a solar cell device. Since the above process uses ion implantation and high temperature annealing during doping, when fabricating solar cell devices, it is necessary to know the activated impurity concentration, evaluate the quality of the SOI bonding interface, and ensure that high-quality PN junctions a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H02S50/10
CPCH02S50/10H01L22/14H01L22/34Y02E10/50
Inventor 刘森戴彬关宇轩符韬梁国豪
Owner MICROTERA SEMICON (GUANGZHOU) CO LTD