Detection method and detection device of memory

Abstract

The embodiment of the invention provides a detection method and a detection device of a memory, and a bit line used for detecting electric leakage, the method comprises the following steps: the memory comprises a plurality of memory units, the memory also comprises a plurality of sensing amplifiers, and each sensing amplifier comprises a power line for providing a low potential voltage and a power line for providing a high potential voltage; first storage data is written into each storage unit; after the first storage data is written in, reading operation is carried out, and a first test result is obtained based on the difference between the first real data and the first storage data; performing the reading operation again so as to read the second real data in each storage unit; a second test result is acquired based on the difference between the second real data and the second storage data; and based on the second test result and the first test result, the specific position of the electric leakage bit line is acquired. The detection method of the memory provided by the embodiment of the invention is beneficial to improving the accuracy of detecting the bit line of the electric leakage of the memory.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a detection method and a detection device for a memory. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a semiconductor storage device commonly used in computers, and is composed of many repeated storage units. Each memory cell usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor. The voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] As the DRAM manufacturing process becomes more and more advanced and the storage density is higher and higher, more and more problems ...

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a detection method and detection device for a memory, which solves the problem of low accuracy of the bit line for detecting the leakage of the memory

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