Vertical cavity surface emitting laser

A vertical cavity surface emission and laser technology, applied in the field of lasers, can solve problems such as difficulty in meeting modern communication requirements and large parasitic capacitance, and achieve the effects of reduced size, reduced parasitic capacitance, and easy control.

Active Publication Date: 2021-06-22
VERTILITE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, with the increasing requirements for communication, such as the higher and higher requirements for communication transmission rate, it is necessary to use a vertical cavity surface emitting laser with extremely small parasitic capacitance. The existing vertical cavity surface emitting laser has a large parasitic capacitance, which is difficult Meet the requirements of modern communication

Method used

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Embodiment Construction

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.

[0024] figure 1 A schematic structural diagram of a vertical cavity surface emitting laser provided by an embodiment of the present invention, figure 2 for figure 1 Sectional view along A1A2 direction, image 3 for figure 1 Sectional view along A3A4 direction, Figure 4 for figure 1 Sectional view along A5A6 direction, combined with Figure 1 to Figure 4 , the vertical cavity surface emitting laser provided in this embodiment includes a substrate 10, an epitaxial layer 11, a first electrode 12, and a bondin...

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Abstract

The invention discloses a vertical cavity surface emitting laser. The laser comprises a substrate, an epitaxial layer, a first electrode and a bonding pad. The epitaxial layer is provided with a light-emitting area and a non-light-emitting area, the first electrode comprises an annular part and a connecting part which are arranged on the same layer, the annular part is arranged in the non-light-emitting area adjacent to the light-emitting area and is in contact with the epitaxial layer, and the annular part extends along the non-light-emitting area in the direction of the bonding pad to form the connecting part; the epitaxial layer of the non-light-emitting are is provided with a groove, the groove semi-surrounds the light-emitting area, and the orthographic projection of the groove on the substrate is not overlapped with the orthographic projection of the connecting part on the substrate; the bonding pad is located in the non-light-emitting area, and the bonding pad is arranged on the side, away from the substrate, of the epitaxial layer and is in lap joint with the connecting part. According to the embodiment of the invention, the parasitic capacitance of the vertical-cavity surface-emitting laser can be reduced.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of lasers, in particular to a vertical cavity surface emitting laser. Background technique [0002] With the rapid development of modern electronic technology, especially communication technology, the demand for vertical cavity surface emitting laser (VCSEL) that can be used as a communication light source has greatly increased. [0003] However, with the increasing requirements for communication, such as the higher and higher requirements for communication transmission rate, it is necessary to use vertical cavity surface emitting lasers with extremely small parasitic capacitance. The existing vertical cavity surface emitting lasers have large parasitic capacitances and are difficult to Meet the requirements of modern communication. Contents of the invention [0004] The invention provides a vertical cavity surface emitting laser to reduce the parasitic capacitance of the vertical ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/183
CPCH01S5/04254H01S5/183
Inventor 丁维遵翁玮呈刘嵩梁栋
Owner VERTILITE CO LTD
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