Semiconductor structure and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of avoiding adverse effects, improving production yield, and improving warpage changes
Active Publication Date: 2021-06-25
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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Abstract
The invention provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps that: a wafer is provided, the wafer comprises a front surface used for forming a semiconductor device and a back surface opposite to the front surface, a doped polycrystalline silicon layer is grown on the back surface of the wafer, and the wafer has a first warping degree; and the doped polycrystalline silicon layer is removed, so that the wafer has a second warping degree, and the second warping degree is smaller than the first warping degree. According to the semiconductor structure and manufacturing method thereof of the invention, the polycrystalline silicon film layer on the back surface of the wafer is reduced, so that the warping degree change in the stretching direction of the wafer can be improved; in addition, after the polycrystalline silicon film layer on the back face of the wafer is removed, the silicon dioxide layer is further formed on the back face of the wafer; under the condition that the total thickness of the wafer is not increased or even reduced, the warping degree change of the wafer in the stretching direction can be further improved, and adverse effects caused by increase of the thickness of the wafer are avoided. The wafer warping degree is improved, so that the subsequent process can be carried out smoothly, and the production yield can be improved.
Application Domain
Semiconductor/solid-state device manufacturing
Technology Topic
PhysicsPolycrystalline silicon +7
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PUM
Property | Measurement | Unit |
Thickness | 200.0 ~ 1500.0 | nm |
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