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Method and structure for preventing partial discharge failure of silicon chip resistor, and power semiconductor device

A power semiconductor and partial discharge technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem of high discharge value, eliminate charge accumulation, prevent partial discharge failure, and improve module current flow Effects of Capability and Reliability

Pending Publication Date: 2021-06-29
湖南国芯半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Taking 3300V as an example, when a voltage of 6kV is applied, the lower surface of the silicon wafer resistor is not at the same potential, resulting in a higher partial discharge value at the silicon wafer resistor position

Method used

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  • Method and structure for preventing partial discharge failure of silicon chip resistor, and power semiconductor device
  • Method and structure for preventing partial discharge failure of silicon chip resistor, and power semiconductor device
  • Method and structure for preventing partial discharge failure of silicon chip resistor, and power semiconductor device

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Embodiment Construction

[0036] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0037] Such as Figure 5-8 As shown, in the method for preventing partial discharge failure caused by the silicon chip resistor as the gate resistor in this embodiment, in the silicon chip resistor 2, the potential of one end suspended in the equivalent circuit of the silicon chip resistor 2 is controlled so that it is in line with the silicon chip resistor. The whole of the resistor 2 is at the same potential. Specifically, when performing potential control, the potentials on the upper and lower surfaces of the silicon resistor 2 are controlled to be at the same level, so that the entire silicon resistor 2 is at the same potential, and the corresponding equivalent circuit is as follows Figure 5 shown. Among them, R3 is a resistor that is more than two orders of magnitude larger than R1 and R2, and there is an equivalent diode in t...

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Abstract

The invention discloses a method and a structure for preventing partial discharge failure of a silicon chip resistor serving as a gate resistor, and a power semiconductor device, belongs to the technical field of high-voltage power modules. The problem of partial discharge failure of the silicon chip resistor serving as the gate resistor is solved. According to the technical scheme, the potentials of the upper surface and the lower surface of the silicon chip resistor are located at the same level through a binding line or an optimized lining plate or an optimized silicon chip resistor, so the whole silicon chip resistor is located at the same potential level. The method, the structure and the power semiconductor device have the advantages that the operation is simple and convenient, partial discharge failure caused by the silicon chip resistor serving as a gate resistor is avoided, charge accumulation is eliminated, and the working reliability is improved.

Description

technical field [0001] The invention mainly relates to the technical field of high-voltage power modules, in particular to a method, a structure and a power semiconductor device for preventing partial discharge failure caused by a silicon wafer resistor used as a gate resistor. Background technique [0002] In power semiconductor devices, in order to increase the current level of the module, it is usually solved by paralleling the chip and the substrate level. In this way, it is necessary to solve the problem of current sharing at the chip and liner level. The dynamic current sharing capability of the liner level can be improved through the built-in gate resistor on the liner. [0003] There are two types of gate resistors commonly used, one is ordinary resistors and the other is silicon chip resistors. Both types of resistors have problems affecting the results of partial discharge tests on power semiconductor modules. For ordinary resistors, the problem of poor partial ...

Claims

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Application Information

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IPC IPC(8): H01L23/60H01L27/02
CPCH01L23/60H01L27/0292
Inventor 齐放李道会王彦刚戴小平
Owner 湖南国芯半导体科技有限公司