Optoelectronic semiconductor device with substrate structure

Abstract

The invention discloses an optoelectronic semiconductor device with a substrate structure. The optoelectronic semiconductor device comprises a device body and a substrate, wherein a connecting mechanism is arranged on the substrate, the device body comprises a shell, a heat conduction device and a clamping mechanism, the device body is located above the substrate, the heat conduction device comprises a heat conduction mechanism and a heat dissipation mechanism, the heat dissipation mechanism comprises a plurality of air outlets formed in the top part of the shell, the inner side walls of the air outlets are fixedly connected with dustproof nets, the clamping mechanism comprises a conductive plate fixedly connected to the inner side wall of the shell, the bottom part of the conductive plate is fixedly connected with pins, and the connecting mechanism comprises a plurality of insertion blocks fixedly connected to the substrate. According to the optoelectronic semiconductor device, current flows and is conducted to the electric vibration sheet, the vibration of the electric vibration sheet periodically extrudes and stretches the driving cavity, cooling liquid flows and is collected into the collecting pipe, heat in the device is rapidly conducted to the outside, the device is prevented from being damaged due to too high temperature during use, and the service life of the device is effectively prolonged.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to an optoelectronic semiconductor device with a substrate structure. Background technique [0002] Optoelectronic semiconductor devices refer to various functional devices made using semiconductor photo-electronic (or electro-photon) conversion effects, which are different from semiconductor optical devices (such as optical waveguide switches, optical modulators, optical deflectors, etc.), optical devices The design principle is based on the change of the propagation mode of guided wave light by the external field. It is also different from the optoelectronic devices used by early people. The latter only focuses on the reception and conversion of light energy (such as photoresistors, photocells, etc.). Early optoelectronic devices were limited to For passive applications, the advent of semiconductor lasers as a coherent optical carrier source in the 1960s brought it into the stage...

AI Technical Summary

Problems solved by technology

[0003] However, the existing optoelectronic semiconductor devices with a carrier film and a substrate structure have some shortcomings during use. Generally, pins are used to fix them. When the pins are under too much force, they are easy to cause damage and affect the pins. The stability of the connection, the chip is also soldered to the circuit board by soldering the pins, which causes the bottom of the chip to be in full contact with the circuit board, and the device will be damaged when it is used. After the damage, it needs to be soldered to the lead The tin on the pin is liquefied to take out the device, but this process will cause damage to other connected devices; secondly, the temperature generated when the chip is working is difficult to dissipate, and it is easy to cause damage to the device when the internal heat cannot be dissipated for a long time. The damage will affect its service life. Therefore, an optoelectronic semiconductor device with a substrate structure is proposed

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